Effect of High-Temperature Annealing on Phonon-Phonon Relaxation in Transmutationally-Doped Silicon Crystals

Баранский, П. И.; Savyak, V. V.; Simonenko, Yu. V.; Shcherbina, L. A.

doi:10.1002/pssa.2210910146

Cited by 1 publication

(3 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is known that at low concentrations of charge carriers ( n ≤ 10 15 cm −3 ), the phonon and diffusive (electronic) components of thermo‐emf are additive , and the thermo‐emf anisotropy in the region of impurity conduction (i.e., in condition of one kind of carriers, even if the anisotropy of their effective mass is strongly expressed) is entirely determined only by the anisotropy of the phonon component :

α^{ph} = α - α^{normale},

where α is the experimentally measured thermo‐emf; α e is the electronic (diffusive) component of thermo‐emf; α ph is the component of thermo‐emf associated with drag of electrons by phonons. Anisotropy of drag thermo‐emf in cubic crystals is determined by difference of the phonon components of thermo‐emf along and across of the main axis of isoenergetic ellipsoid, i.e.,

Δ α = α_{| |}^{ph} - α_{⊥}^{ph},

whereas the anisotropy parameter of drag thermo‐emf is determined by their ratio

M = α_{| |}^{ph} / α_{⊥}^{ph} .

…”

Section: Temperature Dependence Of the Anisotropy Parameter Of Drag Tmentioning

confidence: 99%

“…It was necessary to clarify the change character of thermo‐emf anisotropy Δ α and parameter M in n‐Si crystals with temperature, having taken into account the proof of a determinative role of the drag along the main axis of isoenergetic ellipsoid (

α_{| |}^{true(l, t true)} ≫ α_{⊥}^{true(l, t true)}

), obtained in Ref. , and the prevailing significance of the electron drag under the influence of the longitudinal polarization phonons (

α_{| |, ⊥}^{true(l true)} > α_{| |, ⊥}^{true(t true)}

) at the given direction with regard to the axes of ellipsoid.…”

Section: Temperature Dependence Of the Anisotropy Parameter Of Drag Tmentioning

confidence: 99%

“…The dependences of thermoelectric figure of merit Z a ( T ) for CdSb and Zn x Cd 1− x Sb, calculated according to Ref. for two temperatures (300 and 400 K), are presented by the segments of lines 2–5 in Fig. .…”

Section: Temperature Dependences Of Thermo‐emf Anisotropy and Thermoementioning

confidence: 99%

See 2 more Smart Citations

Thermoelectric characteristics of uniaxially deformed n‐Si in the temperature range 85–355 K

Гайдар

Баранский

2016

Physica Status Solidi (b)

View full text Add to dashboard Cite

Phone: þ380 445 255 959, Fax: þ380 445 258 342The temperature dependences of thermoelectromotive force (thermo-emf), tenso-thermo-emf (at XkrTk 001 ½ , X ¼ 1.2 GPa), thermo-emf anisotropy Da ¼ a ph jj À a ph ? , anisotropy parameter of drag thermo-emf M ¼ a ph jj =a ph ? and thermoelectric figure of merit Z a of n-SihPi crystals with charge carrier concentration n e % 1:75 Â 10 14 cm À3 were investigated in the temperature range 85 K T 355 K. It was found that with increasing temperature the anisotropy parameter of drag thermo-emf M decreases 2.4-fold, and the anisotropy parameter of mobility K, 2.3-fold. It is shown that the anisotropy parameter of drag thermo-emf M decreases with temperature much slower than thermo-emf anisotropy Da. It is also shown that within the entire temperature range, the thermo-emf anisotropy Da exceeds the thermo-emf anisotropy, typical for the conventional thermoelectric anisotropic materials in the absence of deformation.

show abstract

α^{ph} = α - α^{normale},

Δ α = α_{| |}^{ph} - α_{⊥}^{ph},

whereas the anisotropy parameter of drag thermo‐emf is determined by their ratio

M = α_{| |}^{ph} / α_{⊥}^{ph} .

…”

Section: Temperature Dependence Of the Anisotropy Parameter Of Drag Tmentioning

confidence: 99%

α_{| |}^{true(l, t true)} ≫ α_{⊥}^{true(l, t true)}

), obtained in Ref. , and the prevailing significance of the electron drag under the influence of the longitudinal polarization phonons (

α_{| |, ⊥}^{true(l true)} > α_{| |, ⊥}^{true(t true)}

) at the given direction with regard to the axes of ellipsoid.…”

Section: Temperature Dependence Of the Anisotropy Parameter Of Drag Tmentioning

confidence: 99%

See 1 more Smart Citation

Thermoelectric characteristics of uniaxially deformed n‐Si in the temperature range 85–355 K

Гайдар

Баранский

2016

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

Effect of High-Temperature Annealing on Phonon-Phonon Relaxation in Transmutationally-Doped Silicon Crystals

Cited by 1 publication

References 2 publications

Thermoelectric characteristics of uniaxially deformed n‐Si in the temperature range 85–355 K

Thermoelectric characteristics of uniaxially deformed n‐Si in the temperature range 85–355 K

Contact Info

Product

Resources

About