2003
DOI: 10.1016/s0304-8853(02)00832-6
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Effect of hydrogen content in the final annealing atmosphere on secondary recrystallization of grain-oriented Si steel

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Cited by 13 publications
(13 citation statements)
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“…To improve the {11 0} /0 0 1S alignment, a great number of experiments had been performed [26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43], and many measures have been employed in the process of production of grain-oriented electrical steels.…”
Section: The Technology Of Productionmentioning
confidence: 99%
“…To improve the {11 0} /0 0 1S alignment, a great number of experiments had been performed [26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43], and many measures have been employed in the process of production of grain-oriented electrical steels.…”
Section: The Technology Of Productionmentioning
confidence: 99%
“…The reason may be that Brass oriented grains and Goss oriented grains both have low energy plane of {110} and thus compete very strongly in the abnormal growth process. [16,17] The average deviation angle between abnormally grown grain orientations and Goss orientation is calculated to be about 108 which is caused by {210}<001> grains and Brass oriented grains neighboring Goss grains. In spite of poor quality of abnormally grown grains by continuous annealing, the most important is the lowest cost, namely, the low heating temperature of slab by 1200 8C, the omitting of normalization annealing, and first of all the continuous annealing time within 10 min.…”
Section: Resultsmentioning
confidence: 99%
“…At the same time, Goss orientation often rotates around the RD axis in DR3 sample. The reason may be that Brass oriented grains and Goss oriented grains both have low energy plane of {110} and thus compete very strongly in the abnormal growth process . The average deviation angle between abnormally grown grain orientations and Goss orientation is calculated to be about 10° which is caused by {210}<001> grains and Brass oriented grains neighboring Goss grains.…”
Section: Resultsmentioning
confidence: 99%
“…For AlN inhibitors, AlN precipitation is inhibited in 0.23-and 0.30-mm thick oriented silicon steels, and secondary recrystallization temperature increases at high N 2 partial pressure 19) . By contrast, the secondary recrystallization tempera-ture would be lower and AlN is more likely to decompose at a lower temperature as the N 2 partial pressure becomes lower 23) . A study on the evolution behavior of AlN particles under different atmosphere conditions showed that more N atoms will be lost from the matrix, and AlN particles are more likely to coarsen at 920 C with prolonged treatment at lower N 2 partial pressure 27) .…”
Section: Introductionmentioning
confidence: 97%
“…In the inherent inhibitor method, the AlN particle is mainly derived from the precipitation in the normalized stage 7) . Meanwhile, under the 25%H 2 +75%N 2 (volume fraction, vol%) annealing atmospheric condition in the nal annealing process, AlN particles start to ripen at 900 C and lose inhibition ability below 980 C 23) . For the acquired inhibitor method, due to the initial alloy composition, the formation of large amount of AlN particles mainly depends on the decomposition and transformation of Si 3 N 4 formed by nitriding treatment as temperature reaches more than 700 C in the nal annealing process 24,25) .…”
Section: Introductionmentioning
confidence: 99%