Effect of hydrogen on the current-voltage characteristics of Pd/p-InGaAsP and Pd/n-InGaAs barrier structures

Nanostructures on SiC surface created by laser microablation

“…In the first case increasing of the hn max = 2.75 eV band intensity can be caused by growth of N concentration in the near-surface layers due to the drift under TGE conditions [2]. Direction of the drift of nitrogen atoms N, according to theoretical considerations [12,20], is turned against of the temperature T gradient, from hot to cold layers of the lattice, because in our case the size (the covalent radius) of the dopant atom N is smaller than the effective size of the atoms of the host material SiC, i.e., from maximum temperature T max to the surface, and to the bulk. Redistribution is also suggested by the sharp boundaries of the irradiated areas of the surface (marked by arrows on the AFM ''friction mode'' image in Fig.…”

“…The effect at LI is manifested as transfer of dopants and transformation of intrinsic defects without a phase transition in the material. Theoretical considerations of the TGE [12] show that direction of displacements of atoms is defined by the covalent radius of the dopant and its local environment. The www.elsevier.com/locate/apsusc Applied Surface Science 254 (2008) 2031-2036 processes mentioned above proceed in the solid phase and are predominant in ablation.…”