Effect of hydrogen participation on the improvement in electrical characteristics of HfO2gate dielectrics by post-deposition remote N2, N2/H2, and NH3plasma treatments

Huang, Li Hsuan; Chang, Ming Xian; Huang, J.; Kuo, Chin Lung; Lin, Hong‐Ping; Liao, M.-H.; Lee, Min-Hung; Chen, Miin Jang

doi:10.1088/0022-3727/46/5/055103

J. Phys. D: Appl. Phys.

2012

DOI: 10.1088/0022-3727/46/5/055103

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Effect of hydrogen participation on the improvement in electrical characteristics of HfO₂gate dielectrics by post-deposition remote N₂, N₂/H₂, and NH₃plasma treatments

Li Hsuan Huang¹,

Ming Xian Chang²,

J. Huang³

et al.

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Cited by 6 publications

References 27 publications

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Importance of higher‐level excited species in argon remote plasma sources: Numerical modeling with consideration of detailed chemical reaction pathways

Cheon

Yoon

et al. 2022

Plasma Processes & Polymers

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Stable plasma ignition of remote plasma sources (RPSs) for various plasma processes is essential to ensure the stability of the discharge, steady operating conditions, and high plasma density. In an RPS in which the gas pressure exceeds 1 Torr, the reaction paths leading to the high-level excited state play an essential role in the power balance and energy cascade at high applied input power. In this study, 97 chemical reactions in a detailed reaction set involving argon discharge are investigated in the steady-state to understand the extent to which the dominant reactions are affected by variations in the process parameters. We observed that the stepwise ionization process of the argon 4p excited state significantly contributes to sustaining high-density plasmas in the near 1 Torr regime.

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Importance of higher‐level excited species in argon remote plasma sources: Numerical modeling with consideration of detailed chemical reaction pathways

Cheon

Yoon

et al. 2022

Plasma Processes & Polymers

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Studies on RF magnetron sputtered HfO2 thin films for microelectronic applications

Kondaiah

Shaik

Rao

2015

Electron. Mater. Lett.

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Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen

Huang

Tsai

et al. 2014

Applied Surface Science

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Effect of hydrogen participation on the improvement in electrical characteristics of HfO₂gate dielectrics by post-deposition remote N₂, N₂/H₂, and NH₃plasma treatments

Cited by 6 publications

References 27 publications

Importance of higher‐level excited species in argon remote plasma sources: Numerical modeling with consideration of detailed chemical reaction pathways

Importance of higher‐level excited species in argon remote plasma sources: Numerical modeling with consideration of detailed chemical reaction pathways

Studies on RF magnetron sputtered HfO2 thin films for microelectronic applications

Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen

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