Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes

Yahyazadeh, Rajab

doi:10.1007/s11082-021-03236-9

Cited by 4 publications

(8 citation statements)

References 34 publications

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“…e hh b E denotes the bounding energy of exciton, which depends on external perturbation such as pressure and temperature through electron and hole effective masses [32][33][34]. Exciton energies are determined by employing a variational procedure [35].…”

Section: Further mentioning

confidence: 99%

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Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Yahyazadeh

2023

Preprint

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In this study, a numerical model was used to analyze the Auger current in c-plane InGaN/GaN multiple-quantum-well light-emitting diodes (MQWLED) under hydrostatic pressure. Finite difference techniques were employed to acquire energy eigenvalues and their corresponding eigenfunctions of \({\text{InGaN/GaN}}\) MQWLED, and the hole eigenstates were calculated via a 6×6 k.p method under applied hydrostatic pressure. Our calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the total Auger coefficient (76% and 20%, respectively). It was found that a change in pressure up to 10 GPa increases the carrier density up to 0.75×1019cm−3 and 0.56×1019cm−3 for the holes and electrons, respectively, and the effective band gap. Based on the result, it could decrease the exaction binding energy, rise the electric field rate up to 0.77MV/cm, and decrease the Auger coefficient and Auger current up to 2.1×10− 31 cm6s− 1and 75A/cm2 in the multiple-quantum well regions, respectively. Our studies provided more detailed insight into the origin of the Auger current drop under hydrostatic pressure in InGaN-based LEDs.

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Section: Further mentioning

confidence: 99%

“…F  , and k A for the CHHS Auger process is as follows: The effective band gap relation is written as [29,31,32]:…”

Section: Calculation Modelmentioning

confidence: 99%

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Yahyazadeh

2023

Preprint

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“…The jk 1 − k 1 0 j depends on parameters such as the effective band gap (E eff ), the spin-orbit splitting ðΔ so Þ, and the electron ðm Ã e Þ, heavy hole ðm Ã h Þ, and split-off band ðm Ã s Þ effective masses. The effective band gap relation is written as 29,31,32 E Q -T A R G E T ; t e m p : i n t r a l i n k -; e 0 0 4 ; 1 1 4 ; 4 7 5…”

Section: Calculation Modelmentioning

confidence: 99%

“…Further, E e;hh b denotes the bounding energy of exciton, which depends on external perturbation, such as pressure and temperature, through electron and hole effective masses. [32][33][34] Exciton energies are determined by employing a variational procedure. [35][36][37][38] The binding energy of the s-like exciton resulting from the coupling of the electron in the i'th subband and the hole in the j'th subband is then given by 35 Furthermore, E g ðT; 19,21,23 and E g ð0;0Þ stands for the band gap energy of GaN or InGaN in the absence of the hydrostatic pressure and at temperature 0K.…”

Section: Calculation Modelmentioning

confidence: 99%

“…The effective mass of the carriers in each of the subbands of the quantum wells (electrons and holes) is calculated after determining the effective mass of the carriers in the GaN barrier and the InGaN/GaN well. 32,47 Binary effective mass parameters are linearly interpolated to obtain InGaN values. The numerical values of the VB effective mass parameters (Ai) and deformation potentials (Di) from Ref.…”

Section: Calculation Modelmentioning

confidence: 99%

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Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode

Yahyazadeh

Hashempour

2023

J. Nanophoton.

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A numerical model was used to analyze the Auger coefficient in a c-plane InGaN/ GaN multiple-quantum-well laser diode (MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire energy Eigenvalues and their corresponding Eigenfunctions of InGaN/GaN MQWLD, and the hole Eigenstates were calculated via a 6 × 6 k.p method under applied hydrostatic pressure. It was found that a change in pressure up to 10 GPa increases the carrier density in the quantum well and barriers and the effective band gap. Based on the result, the exaction binding energy decreased, the electric field rate increased up to 0.77 MV∕cm, and the Auger coefficient decreased down to 2.1 × 10 −31 and 0.6 × 10 −31 cm 6 s −1 in the MQW and barrier regions, respectively. Also, the calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the Auger coefficient. Our study provides more detailed insight into the origin of the Auger recombination rate drop under hydrostatic pressure in InGaN-based light-emitting diodes.

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Numerical investigation of Auger current density in a InGaN/GaN multiple quantum well solar cell under hydrostatic pressure

Yahyazadeh,

Hashempour

2023

Indian J Phys

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Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes

Cited by 4 publications

References 34 publications

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode

Numerical investigation of Auger current density in a InGaN/GaN multiple quantum well solar cell under hydrostatic pressure

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