Effect of III/V Ratio on the Properties of Vapor Phase Epitaxial GaP

Stringfellow, G. B.; Hall, H. Tracy

doi:10.1149/1.2132967

Cited by 21 publications

(1 citation statement)

References 29 publications

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“…The assumption that it is the variation of the Ga-vacancy concentration that affects the behaviour of the concentration of the predominant recombination centre at E v + 0.75 eV and consequently determines the minority carrier lifetime in GaP provides an explanation for the experiments of Stringfellow and Hall [29] and Jordan et al [26]. Starting from this assumption and adopting the hypothesis of Peaker and Hamilton [32] that the trap at 0.75 eV is composed of native defects, one of these being V, we now propose a model of the H4 defect.…”

Section: Model Of the H4 Centrementioning

confidence: 99%

Models of deep centres in gallium phosphide

Skazochkin¹,

Krutogolov²,

Бондаренко

1996

Semicond. Sci. Technol.

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The effects of varying the ammonia flux on the concentrations of background Si and free carriers and on deep traps for majority and minority carriers in n-GaP layers grown by vapour epitaxy have been studied by secondary ion mass spectrometry and deep level transient spectroscopy. The contribution from the background silicon to the free carrier concentration in samples variously doped with nitrogen is discussed. It is shown that the deep centre at E c − 0.24 eV may be attributed to silicon. The model of this centre in the form Si Ga -V P accounts for experimental results obtained in the present work and those already reported. The concentration of the dominant nonradiative recombination centre at E v + 0.75 eV is studied, depending on growth conditions, and its model is proposed in the form of a complex consisting of intrinsic defects.

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Section: Model Of the H4 Centrementioning

confidence: 99%

Models of deep centres in gallium phosphide

Skazochkin¹,

Krutogolov²,

Бондаренко

1996

Semicond. Sci. Technol.

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ChemInform Abstract: EFFECT OF III V RATIO ON THE PROPERTIES OF VAPOR PHASE EPITAXIAL GALLIUM PHOSPHIDE

Stringfellow¹,

Hall²

1976

Chemischer Informationsdienst

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A correlation between concentration of deep levels and growth conditions for VPEGaP

Seifert

Jacobs

Pickenhain

et al. 1985

Cryst. Res. Technol.

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A minimum in dccp level concentration in VPE-Gal' is found which corresponds t o exceptional growth conditions near a relative maximum of the growth rate r in dependence on the GaCl input pressure p &~. The minimum occurs at the cross-over between mass flow controlled growth (at low p&rl) and surface reaction controlled growth (at high p 8 ,~: l ) .Ein Minimum in der Konzentration tiefer Zentren wird fur VPE-GaT in Abhiingigkeit vom GaC1-Eingangspartialdruck p&, gefundon. Dieses Minimum entspricht ansgezeichneten Wachstumsbedingungen in der Niihe eines relativen Maximums der Wachstumsgeschwindigkeit, das am Ubergang zwischen massentransportkontrolliertem (bei niedrigem p&a) und oberfliichenreaktionskontrollicrtem Wachstum (bei hohcm p&c1) auftritt. I . IntroductionVPE growth conditions, particularly growth temperature and partial pressures of the reactants, strongly affect the growth characteristics and material quality of AIIIBV epitaxial layers.An important observation is, for instance, that the optimum properties of LED'S depend on the gas phase AII1/BV ratio present during the deposition process (EN-STROM e t al. ; WESSELS; STRINGFELLOW, HALL). A t certain AKI1/BV ratios maxima in minority carrier lifetimes of epitaxial layers (KUIJPERS et a].), maxima in electron mobilities (HYDRR) and niiniuin in free electron concentration8 (CLARKE) have been observed. A si tnilar behaviour is also known from LPE experiments using caontrolled vapour pressures of the B-component (NISHJZAWA et al.).The effective AI1I/BV ratio, however, is not clearly defined, since the actual ratio directly at the growing surface differs from that in the input gases. WU et al. have studied the effects of growth temperature and reactant partial pressures a t fixed ATI1/BV ratios on the efficiency of GaAso6Po.a LED'S. They found that there is a correlation with the growth regime. I n either case the diode efficiency peaks in the kinetic growth regime where the surface reaction begins t o become the rate limiting process. Obviously, the onset of surface-kinetically controlled growth marks exceptional growth conditions. This hints t o the importance of the growth mechanism for the incorporation of killer centers limiting the light output of LED'S. It is the aim of the present paper t o correlate the concentration of deep levels measured by DLTS t o the growth conditions of VPE-Gap. Increasing the GaCl input pressure a minimum in the deep level concentration has been observed. This behaviour puts some light on possible mechanisms for the defect incorporation under

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Effect of III/V Ratio on the Properties of Vapor Phase Epitaxial GaP

Cited by 21 publications

References 29 publications

Models of deep centres in gallium phosphide

Models of deep centres in gallium phosphide

ChemInform Abstract: EFFECT OF III V RATIO ON THE PROPERTIES OF VAPOR PHASE EPITAXIAL GALLIUM PHOSPHIDE

A correlation between concentration of deep levels and growth conditions for VPEGaP

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