Effect of incorporating copper on resistive switching properties of ZnO films

Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures

“…This behavior is in strong contrast to the situation of RS effect originated from the Schottky barrier alteration at interface, in which the HRS corresponds to the low interface capacitance state. 7,17 This abnormal phenomenon was also reported by other group, and could be understood by the trapping/detrapping of electrons at the traps. An additional capacitance associated with the trapped carriers will appear in the SCLC region, while only geometric capacitance contributes in the ohmic region without the unbalanced hot carriers.…”

“…1,2 Various kinds of materials have been found to show RS effect and different mechanisms or factors have been proposed to explain the observed RS effect, including formation/rupture of conductive filament, 3,4 migration of oxygen vacancies, 5,6 alteration of Schottky barrier, 7 and trapping/detrapping of charge carriers, 8,9 etc. In a general sense, the key ingredient in RS effect is defects, either atomic size (oxygen vacancy, etc) or large size (dislocations, filament or doped particles, etc).…”

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

“…Nevertheless, controlled deposition parameter and post-thermal treatment on resistive layer may be not as effective as doping technique to fully adjust the defect concentration. Various dopant elements, such as Al [ 137 , 175 , 176 ], B [ 177 ], Co [ 138 , 139 , 169 , 178 ], Cr [ 110 , 158 ], Cu [ 87 , 140 , 179 ], Fe [ 180 , 181 ], Ga [ 112 , 182 , 183 ], La [ 144 ], Li [ 184 , 185 ], Mg [ 55 , 111 , 145 , 186 – 190 ], Mn [ 91 , 146 – 148 , 191 – 195 ], N [ 56 , 149 ], Ni [ 196 ], S [ 197 ], Sn [ 90 , 198 ], Ta [ 199 ], Ti [ 150 , 151 ], V [ 85 ], and Zr [ 86 ], that have been reported may exhibit decent switching performance. ZnO-based RRAM with multi-element doping, such as Al-Sn [ 136 , 200 ], Ga-Sn [ 201 ], and In-Ga [ 141 – 143 , 202 – 208 ], is also proposed.…”

“…As the result, oxygen concentration and insulating behavior in resistive layer are increased and thus improve ON/OFF ratio [ 169 ]. However, excessive dopant may deteriorate switching cycles and stability performance [ 110 , 143 , 151 , 169 , 175 , 179 , 190 ]. The deterioration occurs due to the weakening of c-axis-textured structure after increasing dopant concentration [ 169 ].…”

Ag Nanoparticle-Decorated WO3 Nanowires for Nonvolatile Memory

“…Several research groups have begun the surface modification/functionalization of metal oxide nanostructures via noble metal NPs to increase the charge storage capacity . Noble metal NPs for instance silver (Ag), gold (Au), copper (Cu), and platinum (Pt) as a charge storage element in memory devices has been reported. Memory devices based on NPs are attractive because of the reduction of leakage current from the defects.…”