Effect of indium concentration on luminescence and electrical properties of indium doped ZnO nanowires

Lim, Sin Yee; Brahma, Sanjaya; Liu, Chuan Pu; Wang, Ruey Chi; Huang, Jow Lay

doi:10.1016/j.tsf.2013.09.001

Cited by 22 publications

(15 citation statements)

References 23 publications

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“…Among all these methods sol-gel is an effective, easy and low-cost deposition technique making it possible to obtain nanostructured films. In the literature, many studies have been devoted to the influence of the low In doping concentration, where atomic ratio x of In/(In + Zn) does not exceed 10 % [28][29][30][31], however, high doping has rarely been studied because of the high price of indium [32].…”

Section: Introductionmentioning

confidence: 99%

High transparency and conductivity of heavily In-doped ZnO thin films deposited by dip-coating method

Benzitouni

Zaabat

Mahdjoub

et al. 2018

Materials Science-Poland

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Heavily In doped zinc oxide (IZO) thin films were deposited on glass substrates by dip-coating method with different concentrations of indium. The effect of heavy In doping on the structural, morphological, optical and electrical properties of ZnO was discussed on the basis of XRD, AFM, UV-Vis spectra and Hall effect measurements. The diffraction patterns of all deposited films were indexed to the ZnO wurtzite structure. However, high In doping damaged the films crystallinity. The highest optical transmittance observed in the visible region (>93 %) exceeded that of ITO: the absolute rival of the most commercial TCOs. The grain size significantly decreased from 140 nm for undoped ZnO to 17.1 nm for IZO with the greatest In ratio. The roughness decreased with increasing In atomic ratio, indicating an improvement in the surface quality. Among all synthesized films, the sample obtained with 11 at.% indium showed the best TCO properties: the highest transmittance (93.5 %) and the lowest resistivity (0.41 Ωcm) with a carrier concentration of 2.4 × 1017 cm−3. These results could be a promising solution for possible photonic and optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

High transparency and conductivity of heavily In-doped ZnO thin films deposited by dip-coating method

Benzitouni

Zaabat

Mahdjoub

et al. 2018

Materials Science-Poland

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show abstract

“…The doping of group-I elements not only changed the nanowire size but also altered the crystalline quality and optical band-gap of nanowires, as reported by Sáaedi et al [35]. A decreased resistivity was found by Lim et al when In 3+ ions were used to dope these nanowires [12]. A low turn-on field M a n u s c r i p t with metallic Zn and Ga and catalyst Au by vapor-liquid-solid method [36].…”

Section: Introductionmentioning

confidence: 78%

“…A c c e p t e d M a n u s c r i p t 12 The on E and β were measured as a function of Ga 3+ concentration, the results of which are shown in the inset of Fig. 7(b).…”

Section: Page 12 Of 29mentioning

confidence: 99%

“…A c c e p t e d M a n u s c r i p t 3 In these instances, the synthesis conditions-including seed type [7][8][9], source composition [10,11], dopant substances [12], and synthesis ambience, temperature, and time [13,14]-significantly influenced the growth and characteristics of the resultant nanowires. In the investigation of nanowire growth mechanisms, two crucial processes have been identified: the formation of nucleation sites [15][16][17][18] and growth by self-assembly [19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

“…[26]. Highly efficient electron emission is achieved when the electron-emitters exhibit low resistivity, have high aspect ratios, and have large Physical and chemical treatments are usually employed to effectively improve the crystallinity, resistivity, and field-emission capacities of the ZnO nanowires [27][28][29][30]. Farid reported that Au-ZnO nanowires, fabricated by electrochemical deposition and annealed at 400°C in air, achieved a low current fluctuation within ±5% of the average value [31].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

ZnO:Ga nanowires with low turn-on field for field-emission lighting

Yang

Tsai

Lin

et al. 2015

Applied Surface Science

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Homologous Self‐Assembled Superlattices: What Causes their Periodic Polarity Switching?

Thakur,

Benafsha,

Turkulets

et al. 2023

Advanced Physics Research

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Quantum semiconductor structures are commonly achieved by bandgap engineering, which relies on the ability to switch from one semiconductor to another during their growth. Growth of a superlattice is typically demanding technologically. In contrast, accumulated evidence points to a tendency among a certain class of multiple‐cation binary oxides to self‐assemble spontaneously as superlattice structures. This class is dubbed the homologous superlattices. For a famous example, when a mixture of indium and zinc is oxidized, the phases of In‐O and ZnO separate in an orderly periodic manner, along the ZnO polar axis, with polarity inversion taking place between consecutive ZnO sections. The same structure is observed when the indium is replaced with other metals, and perhaps even in ZnO alone. This peculiar self‐assembled structure is attracting research over the past decade. The purpose of this study is to gain understanding of the physics underlying the formation of this unique structure. Here, an explanation is proposed for the long‐standing mystery of this intriguing self‐assembly in the form of an electrostatic growth phenomenon and a test of the proposed model is carried out on experimental data.

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Effect of indium concentration on luminescence and electrical properties of indium doped ZnO nanowires

Cited by 22 publications

References 23 publications

High transparency and conductivity of heavily In-doped ZnO thin films deposited by dip-coating method

High transparency and conductivity of heavily In-doped ZnO thin films deposited by dip-coating method

ZnO:Ga nanowires with low turn-on field for field-emission lighting

Homologous Self‐Assembled Superlattices: What Causes their Periodic Polarity Switching?

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