Effect of indium doping on (CdZn)Se composite thin films

Influence of indium doping on the properties of spray deposited CdS0.2Se0.8 thin films

“…This purpose has been mainly achieved by means of two different processes: (i) fabrication of ternary and quaternary alloys, whose band gap can be modulated by controlling the relative concentrations of two elements forming the alloy (for example, CdS x Se 1−x , ZnS x Se 1−x , Cd x Zn 1−x Se, etc.) [5]. and (ii) doping with different dopant density, which causes the broadening of intragap impurity bands and the formation of band tails and band gap renormalization [6].…”

“…In order to get low resistance contact, it is essential to obtain CdSSe thin films which are doped with a suitable donor impurity concentration. Recently, much attention has been given to tailor the optical and electrical properties of these materials by using suitable dopants such as Fe, In and Sb [6,5,11,12]. The process of doping with different dopants causes the broadening of intra gap impurity bands and the formation of band tails and band gap renormalization [11].…”