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Copper doped CdSe thin films of various composition (0.1-1.0 mol %) deposited by dip coating technique on clean glass substrate at room temperature. Sample prepared on stainless steel plates have been applied for PEC characterization. The electrical conductance at 300K enhances as the amount of copper raises up to 0.1 mol % and later magnitude shrinks for greater amount.Copperr doped samples demonstrates n-kind conductance. As temperature rise conductivity also rises confirming semiconducting nature of sample. Activation energy reduces up to 0.1 mol % and enhances at higher copper amount. Thermoelectric power increases up to 0.1 mol % copper dopant sample and later decreases. The rise in thermoelectric power with rise in temperature confirming the uniform characterof the sample. The various performance parameter of PEC were examined with respect to varing dopant amount. Fill factor, ideality factor, short circuit current, open circuit voltage, and solar energy conversion enhances up to 0.1 mol% copper amount then reduces. The utility of this work is in improving the efficiency of PEC cell. The efficiency of doped sample is greater than undoped cadmium selenide.