2016
DOI: 10.18576/ijtfst/050303
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Properties of Cadmium Selenide Thin Films Deposited by Dip Method

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Cited by 5 publications
(3 citation statements)
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“…More information about the solid structure of the (Bi 1Àx Sb x ) 2 S 3 (0 r x r 0.05) films from composition engineering can be extracted from the XRD results (the specific calculation method is described in detail in the ESI †). 27 Firstly, with an increase in the Sb mole fraction, the average crystallite size (D) calculated based on the Scherrer equation 69,70 decreased (Fig. 4C right), and therefore the number of crystallites per unit area (N) increased (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…More information about the solid structure of the (Bi 1Àx Sb x ) 2 S 3 (0 r x r 0.05) films from composition engineering can be extracted from the XRD results (the specific calculation method is described in detail in the ESI †). 27 Firstly, with an increase in the Sb mole fraction, the average crystallite size (D) calculated based on the Scherrer equation 69,70 decreased (Fig. 4C right), and therefore the number of crystallites per unit area (N) increased (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…It shows the effect of deposition temperature ( 40-70)°C on thickness thin film Sb 2 S 3 , when increasing the deposition temperature until reaching to 60 °C the thickness of the films increase because of the large number of ions on the surface of the glass substrate leading to grain growth and increase thickness of the film, after this temperature the thickness of film decreasing by increasing temperature. The lattice "constant a, b and c for orthorhombic structure are calculated using the following relation [17] :…”
Section: Results and Dissectionmentioning
confidence: 99%
“…Semiconductor films of antimony sulfide Sb 2 S 3 were synthesized by chemical deposition on a glass substrate from glycine baths [84,85]. The film thickness was about 0.62 nm.…”
Section: Chemical Deposition Methodsmentioning
confidence: 99%