Effect of InSb/In 0.9 Al 0.1 Sb superlattice buffer layer on the structural and electronic properties of InSb films

Zhao, Xiaoyan; Zhang, Yang; Guan, Min; Cui, Lei; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

doi:10.1016/j.jcrysgro.2017.03.051

Cited by 5 publications

(2 citation statements)

References 35 publications

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“…The lowest‐carrier concentration measured at room temperature is 0.5662 × 10 16 cm −3 , which occur at without mismatch. In the epitaxial layers, the dislocations that act as scattering center can increase the carrier concentration, that is, the higher‐carrier concentration is also related to the large numbers of dislocations. Hereby, the density of misfit dislocations in the epitaxial layer of sample C is the least.…”

Section: Resultsmentioning

confidence: 99%

Surface‐interface analysis of In_xGa_1‐xAs/InP heterostructure in positive and negative mismatch system

Zhao

Guo

Zhang

et al. 2019

Surface & Interface Analysis

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The change of In content in the InxGa1-xAs/InP system leads to the variation of the lattice constant and thereby to the negative mismatch between the base InP and the positive mismatch. Here, we studied the surface morphology and dislocation relationship of In x Ga 1-x As/InP (100) in the positive and negative mismatch system by different characterization techniques. Under the same mismatch, the surface morphology and mass effect of negative mismatch were greater than those of positive mismatch.The reason was that in the negative mismatch system, during the film growth, the disorder degree at the interface increases, leading to an increase in dislocation density, meanwhile, the dislocation in the substrate more easily moved into the film, thus increasing the film and the dislocation density in it. Moreover, the mechanism of the buffer layer was also clarified. The addition of the buffer layer first limited the dislocation movement in the substrate, and secondly reduced the mismatch between the epitaxial layer and the substrate, thereby reducing mismatch dislocation.

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Section: Resultsmentioning

confidence: 99%

Surface‐interface analysis of In_xGa_1‐xAs/InP heterostructure in positive and negative mismatch system

Zhao

Guo

Zhang

et al. 2019

Surface & Interface Analysis

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“…A superlattice is an artificial crystal consisting of two or more materials with periodic and alternate growth which has been used in the making of quantum cascade lasers, superlattice nanowires, and so on [ 20 , 21 , 22 , 23 ]. Zhao Xiaomeng et al inserted the InSb/In 0.9 Al 0.1 Sb superlattice between InSb thin films and a GaAs (001) substrate by the molecular beam epitaxy (MBE), and deduced that the superlattice (SL) structure could effectively prevent dislocation propagating to the upper InSb thin films [ 24 ]. Obviously, the introduction of superlattice layers between the epitaxial layer and substrate has also shown some better possibilities to reduce the dislocations [ 25 , 26 ].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate

et al. 2018

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In0.82Ga0.18As epitaxial layers were grown on InP (100) substrates at 530 °C by a low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The effects of different buffer structures, such as a single buffer layer, compositionally graded buffer layers, and superlattice buffer layers, on the crystalline quality and property were investigated. Double-crystal X-ray diffraction (DC-XRD) measurement, Raman scattering spectrum, and Hall measurements were used to evaluate the crystalline quality and electrical property. Scanning electron microscope (SEM), atomic force microscope (AFM), and transmission electron microscope (TEM) were used to characterize the surface morphology and microstructure, respectively. Compared with the In0.82Ga0.18As epitaxial layer directly grown on an InP substrate, the quality of the sample is not obviously improved by using a single In0.82Ga0.18As buffer layer. By introducing the graded InxGa1−xAs buffer layers, it was found that the dislocation density in the epitaxial layer significantly decreased and the surface quality improved remarkably. In addition, the number of dislocations in the epitaxial layer greatly decreased under the combined action of multi-potential wells and potential barriers by the introduction of a In0.82Ga0.18As/In0.82Al0.18As superlattice buffer. However, the surface subsequently roughened, which may be explained by surface undulation.

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Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency

Dong

Zhang

Cui

et al. 2020

Journal of Crystal Growth

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Effect of InSb/In 0.9 Al 0.1 Sb superlattice buffer layer on the structural and electronic properties of InSb films

Cited by 5 publications

References 35 publications

Surface‐interface analysis of In_xGa_1‐xAs/InP heterostructure in positive and negative mismatch system

Surface‐interface analysis of In_xGa_1‐xAs/InP heterostructure in positive and negative mismatch system

The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate

Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency

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Effect of InSb/In 0.9 Al 0.1 Sb superlattice buffer layer on the structural and electronic properties of InSb films

Cited by 5 publications

References 35 publications

Surface‐interface analysis of InxGa1‐xAs/InP heterostructure in positive and negative mismatch system

Surface‐interface analysis of InxGa1‐xAs/InP heterostructure in positive and negative mismatch system

The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate

Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency

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Surface‐interface analysis of In_xGa_1‐xAs/InP heterostructure in positive and negative mismatch system

Surface‐interface analysis of In_xGa_1‐xAs/InP heterostructure in positive and negative mismatch system