Effect of InSb layer on the interfacial and electrical properties in the structures based on InP

Chellali, Mohammed Reda; Akkal, B.; Tizi, S.; Benamara, Z.; Gruzza, B.; Robert, C.; Bideux, L.

doi:10.1016/s0921-5107(00)00446-3

Cited by 6 publications

(2 citation statements)

References 7 publications

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“…They also calculated the density of interface states and relaxation time using capacitance measured at different frequencies. Chellalia et al [9] have obtained high-quality Schottky type contact with elevated barrier height value of about 0.501 eV. They explained the improvement by the passivation of the substrate, using Sb atoms, which prevent any migration of the semiconductor components during the alumina and gold deposition.…”

Section: Introductionmentioning

confidence: 99%

Structural and frequency dependencies of a.c. and dielectric characterizations of epitaxial InSb-based heterojunctions

et al. 2016

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In this work, heterojunction of InSb/InP was grown by liquid phase epitaxy (LPE). Surface morphology and crystalline structure of the heterojunction were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The frequency and temperature dependences of a.c. conductivity and dielectric properties of the heterojunctions were investigated in the ranges of 100 kHz-5 MHz and 298-628 K, respectively. The a.c. conductivity and its frequency exponents were interpreted in terms of correlated barrier hopping model (CBH), as the dominant conduction mechanism for charge carrier transport. The calculated activation energy, from the Arrhenius plot, was found to decrease with increasing frequency. Experimental results of both dielectric constant ε 1 and dielectric loss ε 2 showed a remarkable dependence of both frequency and temperature.

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Section: Introductionmentioning

confidence: 99%

Structural and frequency dependencies of a.c. and dielectric characterizations of epitaxial InSb-based heterojunctions

et al. 2016

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“…Using these approximations and analysing the second region of the I -V curve, 11 we estimated the value of the series resistance R S to be about 125 and 9892 for different film thicknesses of TiN on PS. The increase of R S when the TiN thickness increases indicates that the structure become resistive.…”

Section: Resultsmentioning

confidence: 99%

Electrical and optical characterisation of TiN porous Si/Si structures

Benzekkour¹,

Gabouze²,

Sam³

et al. 2006

Surface & Interface Analysis

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In this paper, the electrical and optical behaviour of a new porous silicon (PS) based structure based on a titanium nitride (TiN) covered PS structure has been studied. Titanium nitride was deposited by radio frequency (r.f.) pulverisation of titanium under nitrogen atmosphere. A rectifying behaviour has been observed from the I -V curves of the structures, which suggests a Schottky-like junction. The change in the electrical parameters such as the ideality factor, resistivity of the film, series resistance (R S ), etc. as a function of deposition time is discussed. The value of the refractive index of the TiN layers is found to be 1.04 to 1.09. The values of the extinction coefficient k indicate that the TiN layers are transparent. In addition, spectral response and spectrophotometric measurements of the TiN/PS/Si structure were performed.

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XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation

Benamara¹,

Mecirdi²,

Bouiadjra³

et al. 2006

Applied Surface Science

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Effect of InSb layer on the interfacial and electrical properties in the structures based on InP

Cited by 6 publications

References 7 publications

Structural and frequency dependencies of a.c. and dielectric characterizations of epitaxial InSb-based heterojunctions

Structural and frequency dependencies of a.c. and dielectric characterizations of epitaxial InSb-based heterojunctions

Electrical and optical characterisation of TiN porous Si/Si structures

XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation

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