Electrical and optical characterisation of TiN porous Si/Si structures

Benzekkour, N.; Gabouze, N.; Sam, S.; Saoula, Nadia; Henda, K.

doi:10.1002/sia.2242

Cited by 2 publications

(2 citation statements)

References 13 publications

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“…The electrical and optical properties of TiN have been studied in another of our previous works [10] ; we demonstrated the strong influence of the deposition time of TiN on the I-V behavior.…”

Section: Introductionmentioning

confidence: 91%

Study of the deposition of Ti/TiN multilayers by magnetron sputtering

Saoula¹,

Djerourou²,

Yahiaoui³

et al. 2010

Surface & Interface Analysis

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In this study, we present the effect of the plasma deposition parameters on the electrical and structural properties of Ti/TiN multilayers. The films were formed by r.f. magnetron sputtering (13.56 MHz) under nitrogen and argon reactive plasma at low pressure. The first step of our study was the optimization of the deposition conditions in order to obtain good-quality films. The total pressure was set between 2 and 10 mTorr. The primary result is that the self-bias voltage plays a major role in the structural evolution of TiN films by changing the preferred film orientation and their hardness. The variation of the resistivity as the function of substrate bias was also investigated. The deposited multilayers were characterized by X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and Raman scattering analysis, as well as by the standard four-probe technique.

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Section: Introductionmentioning

confidence: 91%

Study of the deposition of Ti/TiN multilayers by magnetron sputtering

Saoula¹,

Djerourou²,

Yahiaoui³

et al. 2010

Surface & Interface Analysis

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“…Porous silicon on which the TiO 2 thin films were deposited was formed on (100) oriented, 1Ω.cm, p-type silicon wafer substrates by anodisation in HF/Ethanol. A detailed description of porous silicon formation is given elsewhere [13]. The UV-visible transmittance of the films was measured with a CARY 500 "VARIAN" spectrophotometer.…”

Section: Methodsmentioning

confidence: 99%

Formation of Rough TiO<sub>2</sub> Thin Films on Glass and Porous Silicon by Sol-Gel Method

Benzekkour¹,

Ghomrani²,

Gabouze³

et al. 2009

MSF

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Substrate dipping in a composite sol-gel solution was used to prepare smooth and rough thin films of titanium dioxides (TiO2) on porous silicon (PS) and conductor glass. The fabrication process and optical measurements of these layers are presented. Sol-gel films were coated by dip-coating method on porous silicon layer. The characterizations of deposited layer were performed by spectral response, ellipsometry and spectrophotometry. The results show that the optical and electrical properties of the structures strongly depend on the deposition conditions of TiO2. In addition, the band gap energy Eg and refractive index of the structure can be easily varied depending on TiO2 thicknesses and calcination temperatures. Finally, the electrical and optical parameters show a promising result in solar cells application and photocatalytic activity.

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Electrical and optical characterisation of TiN porous Si/Si structures

Cited by 2 publications

References 13 publications

Study of the deposition of Ti/TiN multilayers by magnetron sputtering

Study of the deposition of Ti/TiN multilayers by magnetron sputtering

Formation of Rough TiO<sub>2</sub> Thin Films on Glass and Porous Silicon by Sol-Gel Method

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