2022
DOI: 10.1016/j.matdes.2022.110549
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Effect of intentional chemical doping on crystallographic and electric properties of the pyrochlore Bi2Sn2O7

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Cited by 8 publications
(12 citation statements)
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“…However, this disadvantage is expected to be overcome via the selection of an appropriate crystal structure based on phase stability 18 . On the other hand, the hole carrier densities of Sn 2+ -based oxide semiconductors (10 17 -10 18 cm −3 ) are several orders of magnitude greater than those of Bi 3+ -based ones (10 13 -10 14 cm −3 ) [12][13][14][15][16][17] . Such characteristics of Sn 2+ -based oxide semiconductors in terms of carrier density are useful for designing electronic devices with high conductivities.…”
Section: Introductionmentioning
confidence: 99%
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“…However, this disadvantage is expected to be overcome via the selection of an appropriate crystal structure based on phase stability 18 . On the other hand, the hole carrier densities of Sn 2+ -based oxide semiconductors (10 17 -10 18 cm −3 ) are several orders of magnitude greater than those of Bi 3+ -based ones (10 13 -10 14 cm −3 ) [12][13][14][15][16][17] . Such characteristics of Sn 2+ -based oxide semiconductors in terms of carrier density are useful for designing electronic devices with high conductivities.…”
Section: Introductionmentioning
confidence: 99%
“…In this regard, precise tuning of the carrier densities of Sn 2+ -based p-type oxide semiconductors is highly necessary. However, intentional control over the hole carrier density remains a challenging undertaking 17,[19][20][21][22] . Especially, Sn 2+ -based oxides in the thin-film form still show the insulating properties [19][20][21][22] .…”
Section: Introductionmentioning
confidence: 99%
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