Effect of interface defect density on performance of perovskite solar cell: Correlation of simulation and experiment

Chouhan, Arun Singh; Jasti, Naga Prathibha; Avasthi, Sushobhan

doi:10.1016/j.matlet.2018.03.095

Cited by 103 publications

(52 citation statements)

References 8 publications

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“…The trap‐state density ( n trap ) can be calculated according to Equation

n_{t r a p} = \frac{2 ϵ ϵ_{0} V_{T F L}}{e L^{2}}

where ϵ and ϵ 0 are the relative dielectric constant of perovskite (6.5) and vacuum, respectively. e is elementary charge, and L is the thickness of the film between two electrodes (≈500 nm).…”

Section: Resultsmentioning

confidence: 99%

“…To further validate the impact of UVO‐treated NiO x HTL on the performance of the PSCs with inverted p‐i‐n planar configuration, Lumerical's FDTD and DEVICE have been deployed to simulate optical‐field‐intensity distributions in the interfaces and detailed photovoltaic parameters ( V OC , J SC , FF, PCE), respectively. The values of work function and electrical conductivity of NiO x layer have been determined by our experimental results, while other parameters (such as energy bandgap, carrier mobility, refractive index and defect density of other used materials) have been extracted from published literatures . Figure a and b illustrate the optical field distributions with a wavelength of 650 nm in the structures of FTO/NiO x /MAPbI 3 and FTO/UVO‐NiO x /MAPbI 3 , respectively.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiO_x as the Hole Transport Layer

et al. 2019

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Nickel oxide (NiOx) has exhibited great potential as a hole transport layer (HTL) for fabricating efficient and stable perovskite solar cells (PSCs). However, it has been greatly limited by its fabrication and manipulation process. In this work, a simple processing method on an ultrathin electrochemical mesoporous NiOx film manipulated by controllable ultraviolet/ozone (UVO) treatmentis employed; the duration of UVO treatment on the NiOx film significantly affects the photovoltaic properties of the PSCs. When the exposure duration increases, the wettability, electrical conductivity, nonstoichiometry, and valence band energy of the NiOx film are improved with varying degrees. Besides, the perovskite grain size, recombination resistance at the perovskite/NiOx interface, and build‐in potential of the device also increase, resulting in higher short‐circuit current density (JSC) and open‐circuit voltage (VOC). Combining these factors together, an optimal exposure time of UVO treatment on the NiOx film has been achieved at 5 min, which results in a significantly high performance with an efficiency of 19.67%, large VOC (>1.1 V), and JSC (>23 mA cm−2). Furthermore, the experimental results are coincide well with simulation results on the different corresponding subjects. Hopefully, this work could facilitate material manipulation toward scalable, high efficiency, and stable solar cells.

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“…The trap‐state density ( n trap ) can be calculated according to Equation

n_{t r a p} = \frac{2 ϵ ϵ_{0} V_{T F L}}{e L^{2}}

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiO_x as the Hole Transport Layer

et al. 2019

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“…Also, Chouhan et al. [ 26 ] used the same software to analyse the effect of interface defect density on the PSC performance.…”

Section: Simulation Proceduresmentioning

confidence: 99%

Impact of absorber layer thickness, defect density, and operating temperature on the performance of MAPbI3 solar cells based on ZnO electron transporting material

Ouslimane

Et-taya

Elmaimouni

et al. 2021

Heliyon

181

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Hybrid organic-inorganic perovskite solar cells (PSCs) are the novel fourth-generation solar cells, with impressive progress in the last few years. MAPbI 3 is a cost-effective material used as an absorber layer in PSCs. Due to the different diffusion length of carriers, the electron transporting material (ETM) plays a vital role in PSCs' performance. ZnO ETM is a promising candidate for low-cost and high-efficiency photovoltaic technology. In this work, the normal n-i-p planar heterojunction structure has been simulated using SCAPS-1D. The influence of various parameters such as the defect density, the thickness of the MAPbI 3 layer, the temperature on fill factor, the open-circuit voltage, the short circuit current density, and the power conversion efficiency are investigated and discussed in detail. We found that a 21.42% efficiency can be obtained under a thickness of around 0.5 μm, and a total defect of 10 13 cm −3 at ambient temperature. These simulation results will help fabricate low-cost, high-efficiency, and low-temperature PSCs.

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“…37 Since mobile defects coexist with fixed impurities, application of pre-bias before capacitance measurement may alter the ionic distribution and the corresponding MS curve, as shown in Figure 1c. However, the effect does not persist and the solar cell relaxes to the initial situation in which the MS analysis is not Figure 1b as accurate values in PSCs, [38][39][40][41][42][43][44][45] what could be useful is to perform qualitative relative comparisons checking changes in the apparent bi V . 46 In this case it should be noticed that the exponential increase of capacitance at forward bias (see Figure 1a,b right axes) is related with the approaching and exceeding of the flat-band potential and the consequent going to the high injection current regime.…”

Section: T mentioning

confidence: 99%

Utilization of Temperature-Sweeping Capacitive Techniques to Evaluate Band Gap Defect Densities in Photovoltaic Perovskites

Almora

García-Batlle

García-Belmonte

2019

J. Phys. Chem. Lett.

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Capacitive techniques, routinely used for solar cell parameter extraction, probe the voltage-modulation of the depletion layer capacitance isothermally as well as under varying temperature. Also defect states within the semiconductor band-gap respond to such stimuli. Although extensively used, capacitive methods have found difficulties when applied to elucidate bulk defect bands in photovoltaic perovskites. This is so because perovskite solar cells (PSCs) actually exhibit some intriguing capacitive features hardly connected to electronic defect dynamics. The commonly reported excess capacitance observed at low frequencies is originated by outer interface mechanisms and has a direct repercussion on the evaluation of band-gap defect levels. Starting by updating previous observations on Mott-Schottky (MS) analysis in PSCs, it is discussed how the thermal admittance spectroscopy (TAS) and the deep level transient spectroscopy (DLTS) characterization techniques present spectra with overlapping or even "fake" peaks caused by the mobile ion-related, interfacial excess capacitance. These capacitive techniques, when used uncritically, may be misleading and produce wrong outcomes.

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Effect of interface defect density on performance of perovskite solar cell: Correlation of simulation and experiment

Cited by 103 publications

References 8 publications

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiO_x as the Hole Transport Layer

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiO_x as the Hole Transport Layer

Impact of absorber layer thickness, defect density, and operating temperature on the performance of MAPbI3 solar cells based on ZnO electron transporting material

Utilization of Temperature-Sweeping Capacitive Techniques to Evaluate Band Gap Defect Densities in Photovoltaic Perovskites

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Effect of interface defect density on performance of perovskite solar cell: Correlation of simulation and experiment

Cited by 103 publications

References 8 publications

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiOx as the Hole Transport Layer

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiOx as the Hole Transport Layer

Impact of absorber layer thickness, defect density, and operating temperature on the performance of MAPbI3 solar cells based on ZnO electron transporting material

Utilization of Temperature-Sweeping Capacitive Techniques to Evaluate Band Gap Defect Densities in Photovoltaic Perovskites

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Product

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Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiO_x as the Hole Transport Layer

Efficient Inverted Planar Perovskite Solar Cells Using Ultraviolet/Ozone‐Treated NiO_x as the Hole Transport Layer