Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe

Abstract

The effect of interfacial oxynitride layer on the band alignment and thermal stability of amorphous LaAlO3∕Si0.75Ge0.25 heterojunction has been investigated. The presence of interfacial oxynitride layer shifts the band alignment due to the modification of interfacial dipole. During the thermal annealing, it was found that the interfacial electronic structures were altered, and the valence-band maximum of LaAlO3 films shifted to the lower energy due to the diffusion of nitrogen species from the interfaces into LaAlO3 films at high annealing temperature.

Effect of thermal treatment on the band offsets and interfacial properties of HfOxNygate dielectrics

“…The valence-band offset increased with the increase in the annealing temperature due to the reduction in the N 2p state, which lies above that of the O 2p state after thermal treatment. A similar shift due to the existence of N atoms in the high-k dielectric films was also found in nitrogen-doped HfSiO films and nitrogen presented in LaAlO 3 films [8,16].…”

Defect compensation in LaAlO3 perovskite-based high dielectric constant oxides

“…N incorporation in LaAlO 3 as gate dielectric material has been studied in some experiments, [40][41][42][43] in which nitrogen does reduce the leakage current. Our calculation confirms that nitrogen addition can reduce the electrically active oxygen vacancies in LaAlO 3 .…”