Effect of Ion Implantation on the Adhesion of Positive Diazoquinone-Novolak Photoresist Films to Single-Crystal Silicon

Abstract

The specific energy of detachment of diazoquinone-novolak FP9120 photoresist films of various thicknesses from singlecrystal silicon is studied by the microindentation method. For 5-μm films, when the normal component of the load is predominant, the values of the specific energy of polymer-film detachment G are shown to vary within the range 0.1-0.3 J/m 2 . In the case of lateral loading for thin films, the G value is 3.5-3.7 J/m 2 . Implantation with boron and phosphorus ions results in an increase in the G value. This effect is more pronounced with P + -ion implantation. The most probable reason for enhancement of the adhesive interaction at the photoresist-silicon interface is the formation of new chemical bonds between hydroxyl groups on the surface of the oxide layer of the silicon wafer and the photoresist molecules. This is a preview of subscription content, access via your institution.