Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

SiGe nanostructures with self-assembled islands for Si-based optoelectronics

“…Recently, it was obtained that the degree of degradation of the PL properties of different SiGe/Si(0 0 1) low-dimensional structures due to irradiation strongly depends on the efficiency of the space localization of the charge carriers in them [18]. It was also shown that high-energy neutron irradiation has the highest impact on the PL spectra of SiGe heterostructures [18].…”

“…Recently, it was obtained that the degree of degradation of the PL properties of different SiGe/Si(0 0 1) low-dimensional structures due to irradiation strongly depends on the efficiency of the space localization of the charge carriers in them [18]. It was also shown that high-energy neutron irradiation has the highest impact on the PL spectra of SiGe heterostructures [18]. In this work, the impact of neutron irradiation on the EL and PC of the structure without carrier confinement (Si diode) and structures with a strong carrier confinement (multilayer diode with Ge(Si) self-assembled islands) is studied.…”

“…At the same time, the EL signal corresponding to the band-to-band recombination of charge carriers in silicon, observed in the EL spectra of the same diode with islands before irradiation (figure 1), disappears already after neutron irradiation with a fluence of 10 13 cm −2 . The higher RH of multilayer structures with Ge(Si) islands, in comparison with bulk silicon, is associated with the effective space localization of charge carriers (3D for holes in the islands and 2D for electrons in the Si spacer layers) [18]. Due to a large valence band offset on the silicon-island heterojunction (more than 300 meV for dome islands grown at 600 • C), the holes are localized in the islands up to RT.…”

“…It could open the way for the usage of these nanostructures in radiation-hardened optoelectronic components. However, all published results are devoted to the study of the radiation impact on the photoluminescence (PL) properties of SiGe nanostructures [16][17][18]. The authors have not come across any paper wherein the influence of the radiation treatment on EL and PC of SiGe structures with self-assembled islands has been studied.…”

One-Stage Formation of Two-Dimensional Photonic Crystal and Spatially Ordered Arrays of Self-Assembled Ge(Si) Nanoislandson Pit-Patterned Silicon-On-Insulator Substrate

“…Among the wide class of SiGe heterostructures, the structures with the self-assembled Ge(Si) nanoislands and quantum dots (hereinafter referred to as QDs) seem to be the most attractive for the application in resonators. The spatial localization of charge carriers in nanoislands leads to the low sensitivity of their luminescent properties to various structural defects [ 10 , 11 ], including the developed surface of many resonators. The emission of Ge(Si) QDs is observed in the practically important wavelength range of 1.3–1.55 µm [ 12 , 13 , 14 ].…”