Effect of isothermal annealing on CdTe and the study of electrical properties of Au–CdTe Schottky barriers

Al-Shibani, K.

doi:10.1016/s0921-4526(02)01278-4

Cited by 20 publications

(5 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The experimental data for the Au concentration distributions in CdTe films, as is seen from figure 2, are sufficiently approximated by the theoretical curve, which is characteristic for impurity diffusion from thin layer [9] N(x, t) = Q/(πDt) 0.5 exp(−x 2 /4Dt), (5) where N(x, t) is the impurity concentration. It should be noted that the Au concentration profile for high temperature 550 • C somewhat differs from relation (5). It can be caused by partial evaporation of components of CdTe, accompanied by an increase in vacancy concentration.…”

Section: Resultsmentioning

confidence: 64%

“…The heat treatment of Au/CdTe contacts can be accompanied by a change in the structure and the characteristics of CdTe films and Au/CdTe contacts due to the diffusion penetration of Au into CdTe substrate. The effect of the thermal annealing and the surface treatment on the change in the electrical characteristics of Au/nCdTe Schottky barriers prepared on the base of CdTe single crystal substrates has been reported [5,6]. To our knowledge, data on the Au diffusion in the CdTe films has been presented only in one work [7].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of Au diffusion on structural, electrical and optical characteristics of CdTe thin films

Dzhafaröv¹,

Çalışkan²

2007

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Diffusion of Au and its effects on structural, electrical and optical properties of CdTe films fabricated by the close-spaced sublimation technique have been investigated. Diffusion of Au was studied in the range 400–550 °C using energy dispersive x-ray fluorescence analysis. Au-doped and un-doped CdTe films were characterized by x-ray diffraction (XRD), electrical and optical absorption measurements. The temperature dependence of the diffusion coefficient of Au in CdTe films is described as D = 4.4 × 10−7exp(−0.54 eV/kT). The mechanism of Au diffusion in polycrystalline CdTe films is attributed to the fast migration of Au along grain boundaries with simultaneous penetration into grains and settling on Cd-vacancies. It is supposed that the weak influence of Au diffusion on XRD patterns of CdTe films can be explained by dispersal of Au atoms preferentially on Cd-vacancies owing to proximity of the covalent radius of Au and Cd. Au atoms, placed on Cd-vacancies (AuCd) during fast cooling from diffusion temperature to room temperature, show an acceptor behaviour with an energy level about of Ev + 0.2 eV. The nature of this level is discussed.

show abstract

Section: Resultsmentioning

confidence: 64%

Section: Introductionmentioning

confidence: 99%

Influence of Au diffusion on structural, electrical and optical characteristics of CdTe thin films

Dzhafaröv¹,

Çalışkan²

2007

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…In the case of TE, saturation current I s is given by, 12 where A is the device area, A * is the Richardson's constant and φ b is the barrier height. The values of diode ideality factor, n, were determined from the slope of Fig.…”

Section: Structure and Current-voltage (I-v) Characteristicsmentioning

confidence: 99%

Fabrication and electrical characterization of p-ZnIn₂Se₄/n-Si heterojunction diode structure

Dhruv

Patel

Lakshminarayana

2016

Materials Research Innovations

View full text Add to dashboard Cite

Semiconducting thin films of p-ZnIn 2 Se 4 were deposited on a crystalline n-silicon (Si) substrate by a flash evaporation technique. A heterojunction diode comprising of Au/p-ZnIn 2 Se 4 /n-Si/Al structure was fabricated. The heterojunction was subjected to current (I)-voltage (V) and capacitance (C)-voltage (V) characterization. The p-ZnIn 2 Se 4 /n-Si heterojunction showed behaviour typical of a p-n junction diode. The heterojunction diode ideality factor, rectification ratio, barrier height and carrier concentration were determined from the I-V and C-V measurements. At lower applied voltages, the electrical conduction was found to take place by thermionic emission whereas at higher voltages, a space charge-limited conduction mechanism was observed. A theoretical energy band diagram was constructed for the fabricated p-ZnIn 2 Se 4 /n-Si heterojunction on the basis of Anderson's model. The photovoltaic behaviour of the fabricated heterojunction was also investigated and the results were reported.

show abstract

“…Isolating moisture-sensitive substances from exposure to water vapor, a process which can effectively enhance their lifetime, is greatly needed in many applications such as metal anti-corrosion, 1 electronic packaging, 2,3 food packaging 4 and cultural relic protection. 5 Polymer barrier materials have been increasingly used in these applications due to their excellent mechanical exibility, low stress, low cost and the ease of processing. For example, one of the commonly used polymer barrier materials is poly(chloro-p-xylylene) (PPXC), which can be conformed onto a desirable protected substrate by chemical vapor deposition (CVD) polymerization of chloro-p-xylylene.…”

Section: Introductionmentioning

confidence: 99%

Enhanced water vapor barrier property of poly(chloro-p-xylylene) film by formation of dense surface cross-linking layer via hyperthermal hydrogen treatment

Shao

et al. 2015

RSC Adv.

View full text Add to dashboard Cite

Polymer barrier materials have been increasingly used in many applications such as metal anti-corrosion, electronic packaging, and cultural relic protection, but they have poor resistance to water vapor compared to inorganic barrier materials. Herein, we demonstrate the first application of hyperthermal hydrogen induced cross-linking (HHIC) technology to improve dramatically the water vapor barrier properties of Poly(chloro-p-xylylene) (PPXC) films by building a dense and intact surface cross-linking layer. With the HHIC treatment, the dense cross-linked layer is formed on the surface of the PPXC film, which serves as a dense barrier layer to water vapor diffusion. The water vapor transmission rate of PPXC film sharply decreases from 8.4×10 -16 to 2.1×10 -16 g·cm/cm 2 ·s·Pa by 75% after 5 min HHIC treatment. Due to the advantage of selective cleavage of C-H bonds by HHIC treatment, the desired chloride groups and original physical properties (e.g. mechanical strength and light transmittance) were well preserved.

show abstract

Effect of isothermal annealing on CdTe and the study of electrical properties of Au–CdTe Schottky barriers

Cited by 20 publications

References 32 publications

Influence of Au diffusion on structural, electrical and optical characteristics of CdTe thin films

Influence of Au diffusion on structural, electrical and optical characteristics of CdTe thin films

Fabrication and electrical characterization of p-ZnIn₂Se₄/n-Si heterojunction diode structure

Enhanced water vapor barrier property of poly(chloro-p-xylylene) film by formation of dense surface cross-linking layer via hyperthermal hydrogen treatment

Contact Info

Product

Resources

About

Effect of isothermal annealing on CdTe and the study of electrical properties of Au–CdTe Schottky barriers

Cited by 20 publications

References 32 publications

Influence of Au diffusion on structural, electrical and optical characteristics of CdTe thin films

Influence of Au diffusion on structural, electrical and optical characteristics of CdTe thin films

Fabrication and electrical characterization of p-ZnIn2Se4/n-Si heterojunction diode structure

Enhanced water vapor barrier property of poly(chloro-p-xylylene) film by formation of dense surface cross-linking layer via hyperthermal hydrogen treatment

Contact Info

Product

Resources

About

Fabrication and electrical characterization of p-ZnIn₂Se₄/n-Si heterojunction diode structure