Effect of light Si-doping on the near-band-edge emissions in high quality GaN

Le, L. C.; Zhao, Degang; Jiang, Desheng; Wu, Liying; Li, L.; Chen, P.; Liu, Z. S.; Zhu, Jianjun; Wang, H.; Zhang, S. M.; Yang, Hui

doi:10.1063/1.4750043

Cited by 9 publications

(7 citation statements)

References 17 publications

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“…Since the intensity of green PL increases with increasing Si concentration, 13) the observed PL band is related to the silicon impurity in Al x Ga 1−x N. The Si atom on the gallium site (Si Ga ) is considered as a shallow donor with a binding energy of 28-30 meV in GaN, [22][23][24][25] and Si Al is considered as a deep donor with a binding energy of 250 meV in AlN. [26][27][28] Thus, the donor in Al-rich Al x Ga 1−x N layers with a binding energy of about 50 meV can be assigned to Si on the cation site.…”

Section: Discussionmentioning

confidence: 99%

Characterization of the green band in photoluminescence spectra of heavily doped Al_xGa₁₋ _xN:Si with the Al content x > 0.5

Osinnykh

Малин

Plyusnin

et al. 2016

Jpn. J. Appl. Phys.

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We report time-resolved and temperature-dependent photoluminescence investigations of green photoluminescence in heavily doped Al x Ga1− x N:Si films grown by molecular beam epitaxy on sapphire substrates. The green band dominates in the photoluminescence spectra of Al x Ga1− x N:Si films with the Al content higher than 0.5. This band is attributed to donor–acceptor and free electron–acceptor transitions involving the same acceptor. Donor and acceptor binding energies of about 50 and 930 meV, respectively, were obtained. The donor was assigned to the Si atom on the Ga/Al site; the acceptor might be the C atom on the N site or a complex comprising a Ga/Al vacancy and a shallow donor.

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Section: Discussionmentioning

confidence: 99%

Characterization of the green band in photoluminescence spectra of heavily doped Al_xGa₁₋ _xN:Si with the Al content x > 0.5

Osinnykh

Малин

Plyusnin

et al. 2016

Jpn. J. Appl. Phys.

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“…This is in good agreement with what was reported in the literature for GaN films grown on sapphire. [17] At the same time, there are a neutral acceptor-bound exciton (A 0 X) transition peak, and two longitudinal optical (LO) phonon replicas of FX A and D 0 X, separated by 90 meV between the FX A and D 0 X peaks, as well as a band-to-acceptor (e-A 0 ) transition located in 3.308 eV. No SF-related peaks are observed.…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

Zhao¹,

Zhao²,

Jiang³

et al. 2015

Chinese Phys. B

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In this paper, the temperature-dependent photoluminescence (PL) properties of GaN grown on Si (111) substrate are studied. The main emission peaks of GaN films grown on Si (111) are investigated and compared with those grown on sapphire substrates. The positions of free and bound exciton luminescence peaks, i.e., FXA and D0X peaks, of GaN films grown on Si (111) substrates undergo red shifts compared with those grown on sapphire. This is attributed to the fact that the GaN films grown on sapphire are under the action of compressive stress, while those grown on Si (111) substrate are subjected to tensile stress. Furthermore, the positions of these peaks may be additionally shifted due to different stress conditions in the real sample growth. The emission peaks due to stacking faults are found in GaN films grown on Si (111) and an S-shaped temperature dependence of PL spectra can be observed, owing to the influence of the quantum well (QW) emission by the localized states near the conduction band gap edge and the temperature-dependent distribution of the photo-generated carriers.

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“…Though, a more prominent DAP could also exist in NBE peak's envelope of other AlGaN films in S-780 and S-800 which resulted in broadening of the NBE emission band. This enhanced DAP emission could be attributed to either increased III-group vacancies or influenced by the unintentional doping from the substrate during the growth into the nitride layer [32,33]. Besides, a broad emission band centered at around 481, 498 and 511 nm in samples S-760, S-780 and S-800, respectively is clearly noticed which is related to the defect states within the energy bandgap of the grown AlGaN films [34].…”

Section: Optical Propertiesmentioning

confidence: 92%

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

et al. 2021

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We have investigated the impact of AlN buffer layer growth parameters for developing highly single crystalline AlGaN films. The low mobility of Al adatoms and high temperature for compound formation are amongst the major causes that affects the growth quality of AlGaN films. Thus, proper optimization need to be carried out for achieving high quality AlGaN due to an augmented tendency of defect generation compared to GaN films. Thus, growth conditions need to be amended to maximize the incorporation ability of adatoms and minimize defect density. So, this study elaborates the growth optimization of AlGaN/AlN/Si (111) heterostructure with varied AlN buffer growth temperature (760 to 800 °C). It was observed that the remnant Al in low temperature growth of AlN buffer layer resist the growth quality of AlGaN epitaxial films. A highly single crystalline AlGaN film with comparatively lowest rocking curve FWHM value (~ 0.61°) and smooth surface morphology with least surface defect states was witnessed when AlN buffer was grown at 780 °C. From the Vegard’s law, the photoluminescence analysis unveils Aluminium composition of 31.5% with significantly reduced defect band/NBE band ratio to 0.3. The study demonstrates good crystalline quality AlGaN film growth with Aluminium content variation between ~ 30–39% in AlGaN/AlN heterostructure on Si(111) substrate leading to a bandgap range which is suitable for next-generation solar-blind photodetection applications.

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Effect of light Si-doping on the near-band-edge emissions in high quality GaN

Cited by 9 publications

References 17 publications

Characterization of the green band in photoluminescence spectra of heavily doped Al_xGa₁₋ _xN:Si with the Al content x > 0.5

Characterization of the green band in photoluminescence spectra of heavily doped Al_xGa₁₋ _xN:Si with the Al content x > 0.5

Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

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Effect of light Si-doping on the near-band-edge emissions in high quality GaN

Cited by 9 publications

References 17 publications

Characterization of the green band in photoluminescence spectra of heavily doped AlxGa1− xN:Si with the Al content x > 0.5

Characterization of the green band in photoluminescence spectra of heavily doped AlxGa1− xN:Si with the Al content x > 0.5

Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

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Characterization of the green band in photoluminescence spectra of heavily doped Al_xGa₁₋ _xN:Si with the Al content x > 0.5

Characterization of the green band in photoluminescence spectra of heavily doped Al_xGa₁₋ _xN:Si with the Al content x > 0.5