Effect of low temperature Ge seed layer and post thermal annealing on quality of Ge1− x Si x (0.05 ≤ x ≤ 0.1) graded buffer layers by UHV-CVD

High Quality InAs Grown on Silicon Substrate

“…2a, steps are flowing downward relative to the AFM image and step height corresponds to InAs lattice constant height [8]. It should be mentioned that there are a few reports on step-flow growth of InAs on GaAs which has a lattice mismatch of ∼7% [9,10]. However, we are unaware of any experimental result on successful step-flow growth of InAs on Si(111), which has a larger lattice mismatch (11.6%).…”

Characterizations of p-type GaAs Films

“…Despite the advantages presented by these orientations (piezoelectric effects and low incorporation of background impurities), the GaAs(001) orientation is still the favorite one to produce optoelectronic devices due to its two orthogonal cleavage axis. A new growth method was suggested recently [7][8][9][10][11] that allows the use of Si as the p-type dopant with GaAs(001) substrates. A few monolayers of gallium were deposited together with the dopant in the absence of arsenic and later were annealed under an As flux to form the GaAs:Si layers.…”

“…The surface of the samples was analyzed with an AFM system in contact mode and Photoluminescence (PL) experiments were carried out at 1.4 K using conventional lock-in techniques. Figure 2 shows the AFM images of the 2 samples along the [1][2][3][4][5][6][7][8][9][10] direction can be observed and their size and concentration decrease when the amount of Ga in each cycle is lowered. This is mainly due to the fact that, under this special growth condition, the first Ga layer covers the whole surface while the excess of Ga material forms droplet spread all over the surface that act as reservoirs of Ga material in order to form the GaAs:Si layers during the annealing under As flux [12,13].…”

MOVPE Growth of Mg-doped GaAs Films

“…Despite the advantages presented by these orientations (piezoelectric effects and low incorporation of background impurities), the GaAs(001) orientation is still the favorite one to produce optoelectronic devices due to its two orthogonal cleavage axis. A new growth method was suggested recently [7][8][9][10][11] that allows the use of Si as the p-type dopant with GaAs(001) substrates. A few monolayers of gallium were deposited together with the dopant in the absence of arsenic and later were annealed under an As flux to form the GaAs:Si layers.…”