Effect of magnetic anisotropy on the transverse planar Hall resistance of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Mn</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi>As</mml:mi></mml:mrow></mml:math>films grown on vicinal<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>GaAs</mml:mi></mml:mrow></

Lim, W. L.; Liu, X.; Dziatkowski, K.; Ge, Z.; Shen, S. C.; Furdyna, J. K.; Dobrowolska, M.

doi:10.1103/physrevb.74.045303

Cited by 20 publications

(10 citation statements)

References 22 publications

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“…6,7 When GaMnAs is grown on a vicinal surface ͑i.e., tilted by some finite angle relative to the ͑001͒ plane͒ fourfold-symmetric magnetic anisotropy property can be utilized to achieve four distinct magnetic states, 8 each corresponding to a different value of Hall resistance produced by different combinations ͑superpositions͒ of the planar and the anomalous Hall effects in a single GaMnAs layer. 6,7 When GaMnAs is grown on a vicinal surface ͑i.e., tilted by some finite angle relative to the ͑001͒ plane͒ fourfold-symmetric magnetic anisotropy property can be utilized to achieve four distinct magnetic states, 8 each corresponding to a different value of Hall resistance produced by different combinations ͑superpositions͒ of the planar and the anomalous Hall effects in a single GaMnAs layer.…”

Section: Four Discrete Hall Resistance States In Single-layer Fe Filmmentioning

confidence: 99%

Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

Yoo

Khym

Yea

et al. 2009

Applied Physics Letters

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We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to four distinct Hall resistance values due to the different combination of planar and anomalous Hall effects for the given direction. Each Hall resistance state can be written reproducibly by the sequence of field pulses and was remained constant at the written state for more than 2 h, which brings the idea of a quaternary memory device much closer to practical implementation.

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Section: Four Discrete Hall Resistance States In Single-layer Fe Filmmentioning

confidence: 99%

Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

Yoo

Khym

Yea

et al. 2009

Applied Physics Letters

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“…A 4-nm-thick Ga 0.93 Mn 0.07 As layer is grown on a semiinsulating GaAs (001) vicinal substrate (4 off from (001) toward [100]) at 200 C by molecular beam epitaxy. 17,18 The buffer layer underneath consists of 4-nm GaAs/30-nm Al 0.8 Ga 0.2 As/30-nm GaAs. The sample is first annealed at 180 C for 5 min, then, processed into a Hall bar geometry along [ 110] with 40-lm width and 144-lm length as shown in Fig.…”

mentioning

confidence: 99%

Electric field control of thermal stability and magnetization switching in (Ga,Mn)As

Chiba

Ono

Matsukura

et al. 2013

Applied Physics Letters

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Magnetization switching induced by electric fields in the absence of external magnetic field has been demonstrated in a field effect structure with a (Ga,Mn)As layer having an in-plane magnetic anisotropy. The switching is related to the modulation of the in-plane magnetic anisotropy by electric fields. Reducing magnetic anisotropy energy height by electric fields, we observe stochastic magnetization switching. V

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“…[ 4 ] However, the principle of MTJ allows more magnetic states with different TMR values by selecting ferromagnetic layers with more easy-axes. Magnetic multi-state memory devices have been demonstrated using in-plane Hall effect in GaMnAs and Fe systems with fourfold anisotropy [5][6][7] and spin valves. [ 8 ] As for MTJs, taking advantages of the cubic magnetocrystalline anisotropy of (Ga, Mn)As with four in-plane magnetic easy axes in <100> directions, the noncollinear alignment of magnetizations (∆ θ ≈ 90°) with different junction resistances was obtained in (Ga, Mn)As-based MTJs, [ 9,10 ] (top ferromagnetic layer, easy axes along <110> directions) trilayer sample by using depth sensitive polarized neutron refl ectometry.…”

Section: Introductionmentioning

confidence: 99%

Octonary Resistance States in La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.7Sr_0.3MnO₃ Multiferroic Tunnel Junctions

Yin

Huang

Liu

et al. 2015

Adv Elect Materials

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General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle‐resolved tunneling magnetoresistance investigations on La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45° and 90°) magnetic configurations. Combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.

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Effect of magnetic anisotropy on the transverse planar Hall resistance ofGa1−xMnxAsfilms grown on vicinalGaAs

Cited by 20 publications

References 22 publications

Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

Electric field control of thermal stability and magnetization switching in (Ga,Mn)As

Octonary Resistance States in La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.7Sr_0.3MnO₃ Multiferroic Tunnel Junctions

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Effect of magnetic anisotropy on the transverse planar Hall resistance ofGa1−xMnxAsfilms grown on vicinalGaAs

Cited by 20 publications

References 22 publications

Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

Electric field control of thermal stability and magnetization switching in (Ga,Mn)As

Octonary Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions

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Product

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Octonary Resistance States in La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.7Sr_0.3MnO₃ Multiferroic Tunnel Junctions