Effect of Magnetic Field Annealing on Magnetic Properties of Iron–Gallium Alloys

Lukshina, V. A.; Шишкин, Д. А.; Кузнецов, А. Р.; Ershov, N. V.; Gornostyrev, Yu. N.

doi:10.1134/s1063783420100182

Cited by 7 publications

(1 citation statement)

References 39 publications

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“…From this it can be concluded that the characteristics of the magnetic field dependence of the Hall resistance are primarily determined by the ratio of gallium and iron. Similar results were obtained in [14], in which the magnetic properties of GaFe were considered. In this article, the concentration of iron was varied and, as a result, there was a change in the behavior of the magnetic field dependence of the Hall resistance.…”

Section: Results Of the Experimentssupporting

confidence: 82%

Formation of the diluted magnetic semiconductor phase by thermal diffusion in the pulsed laser deposition method

Kuznetsov

Дорохин

Kriukov

et al. 2022

J. Phys.: Conf. Ser.

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A new method for the formation of a diluted magnetic semiconductor based on gallium arsenide doped with iron and manganese atoms is considered. The method consists in diffusion doping during pulsed laser deposition in vacuum. Using the method of X-ray photoelectron spectroscopy, the profile of the chemical elements distribution was obtained. The magnetic phases influence on the behavior of the magnetic field dependence of the Hall resistance is analyzed. The technological parameters for the growth of the structure exhibiting ferromagnetic properties at room temperature were selected.

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Section: Results Of the Experimentssupporting

confidence: 82%