Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process

Kacha, Arslane Hatem; Anani, M.; Akkal, B.; Benamara, Z.; Monier, Guillaume; Mehdi, H.; Varenne, Christelle; Ndiaye, Amadou; Robert-Goumet, Christine

doi:10.1016/j.jallcom.2021.159596

Cited by 5 publications

(1 citation statement)

References 31 publications

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“…To evaluate the interface density, the well-known frequency dependent capacitance method is usually used [19]. Kacha et al noticed that the Schottky metal material diffuses and induces a strong effect on the electrical parameters and device performances [20]. Özdemir et al [21] demonstrated that the potential barrier with GaAs decreases with the increase of the thickness of the Schottky.…”

Section: Introductionmentioning

confidence: 99%

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

Lakhdari¹,

Sengouga²,

Labed³

et al. 2022

Semicond. Sci. Technol.

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Schottky diodes based on Be-doped p-type AlGaAs were grown by molecular beam epitaxy (MBE) and their current-voltage (I-V) and capacitance-voltage (C-V) characteristics measured. The Schottky and Ohmic contacts are Ti/Au and Au/Ni/Au, respectively. The effect of the Schottky contact diameter on I-V and C-V characteristics was studied. To elucidate this effect, the Schottky diode figures of merits and interface states are extracted from I-V and C-V characteristics, respectively. It was found that interface states density increases with increasing Schottky contact diameter then saturates beyond 400 µm. The frequency dependence of the C-V characteristics was also related to these interface states. The results of this present study can help choosing the right Schottky contact dimensions.

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Section: Introductionmentioning

confidence: 99%

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

Lakhdari¹,

Sengouga²,

Labed³

et al. 2022

Semicond. Sci. Technol.

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Au–Ag binary alloys on n-GaAs substrates and effect of work functions on Schottky barrier height

Akkaya

2021

J Mater Sci: Mater Electron

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In this study, I investigated the effect of work function (ϕm) of AuxAg1-x (x=0, 0.22, 0.37, 0.71 and 1) on the Au-Ag/n-GaAs Schottky diode (SD) parameters. Ag, Au and three alloys with different compositions deposited on n-GaAs substrates by thermal evaporation method. Surface morphologies of the samples were investigated by atomic force microscope (AFM). Elementel compositions of Schottky metals were conducted by the energy dispersive X-ray spectroscop (EDX). Current-voltage (I-V) and capacitance-voltage (C-V) measurements performed at room temperature.SD parameters such as barrier height (Φb0), ideality factor (n), series resistance (Rs), and interface state density (Dit) of the SD's were calculated from the obtained I-V and C-V data. Experimental results showed that all calculated SD parameters depends on alloy composition. Lowest mean barrier height value was found as 0.789±0.022 eV for Au/n-GaAs SDs and the highest value was determined 0.847±0.008 eV for Au0.71Ag0.29/n-GaAs SDs from I-V measurements. Weak dependencies of barrier height to ϕm was exist and gap state parameter (S) determined as 0.0526. S value was close to the Bardeen limit (S=0), and indicates that Fermi level was strongly pinned in Au-Ag/n-GaAs SDs. Also, main SD parameters like series resistance (Rs), ideality factor (n), reverse bias barrier height (Φb RB ), doping density (Nd) and density of interface states (Dit) were calculated via using different methods from I-V and C-V measurement results. In addition, to determine the leakage current mechanism Poole-Frenkel emission (PFE) and Schottky emission (SE) models applied on reverse bias I-V data.

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Increase in properties of copper electrical contacts in formation of composite coatings based on Ni–C–Ag–N system

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Соснин

et al. 2022

Journal of Materials Research and Technology

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Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process

Cited by 5 publications

References 31 publications

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

Au–Ag binary alloys on n-GaAs substrates and effect of work functions on Schottky barrier height

Increase in properties of copper electrical contacts in formation of composite coatings based on Ni–C–Ag–N system

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