Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO

Ge, Ni-Na; Gong, Cheng; Yuan, Xin-Cai; Zeng, Hongxin; Wei, Xianhua

doi:10.1039/c8ra04784g

Cited by 17 publications

(4 citation statements)

References 29 publications

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“…In the second step, we recalculated the selected 236 candidates with low force criteria (<0.01 eV/A) then ranked them from lowest to highest according to DFE [ V X ]. Since the lower DFE [ V X ] leads to the higher V X concentration, it can lower the operating voltage of the RSM device 55 . Thus, we chose the 22 compounds that had the lowest DFE [ V X ] among the 236 compounds.…”

Section: Resultsmentioning

confidence: 99%

Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

et al. 2021

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Resistive switching memory that uses halide perovskites (HP) has been considered as next-generation storage devices due to low operation voltage and high on/off ratio. However, the memory still faces challenges for stable operation with fast switching speed, which hinders the practical application. Thus, it should be considered from the stage of designing the HP for memory applications. Here, we design the perovskite memory using a high-throughput screening based on first-principles calculations. Total 696 compositions in four different crystal structures are investigated and essential parameters including stability, vacancy formation, and migration are considered as the descriptor. We select dimer-Cs3Sb2I9 as an optimal HP for memory; the device that uses dimer-Cs3Sb2I9 has ultra-fast switching speed (~20 ns) compared to the device that uses layer-Cs3Sb2I9 (>100 ns). The use of lead-free perovskite avoids environmental problems caused by lead in perovskite. These results demonstrate the feasibility to design the memory with ultra-fast switching speed.

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Section: Resultsmentioning

confidence: 99%

Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

et al. 2021

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“…Cabe acentuar que el parámetro de red obtenido en ambos sistemas independientemente del pseudopotencial empleado entre más reducido sea el valor menor las distancias interatómicas, lo que tiene relación directa con los electrones de valencia que definen la banda de valencia, provocando el solapamiento de estados e incrementando la dificultad para que los electrones alleguen a la banda de conducción (Zekry, 2017) (Ge et al, 2018). En ese régimen la reducción de la brecha prohibida en ambos casos es menor con el pseudopotencial GGA ya que al optimizar la estructura el valor del a0 (parámetro de red) es mayor y las distancias interatómicas por lo tanto aumentan.…”

Section: Resultados Y Discusiónunclassified

Estudio teórico fundamental comparativo de perovskitas: NaNbO3 y SrTiO3

Pedroza-Rojas

Hernández

Herrera-Carbajal

et al. 2020

ICBI

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En el presente estudio teórico ab initio comparativo se utiliza el código SIESTA®, mediante la Teoría del Funcional de la Densidad (DFT) para comprender las propiedades estructurales y electrónicas de la fase cúbica en el equilibrio de la geometría de dos perovskitas complejas: NaNbO3 y SrTiO3. Se emplean dos pseudopotenciales base: Aproximación de Gradiente Generalizado (GGA) por los autores Perdew-Burke-Ernzerhof, y Aproximación de Densidad Local (LDA) por Ceperley-Alder. Los parámetros de red obtenidos para el NaNbO3 son a0= 3.900 y 4.040 Å con una precisión del 98.86 y 97.6%. Para el SrTiO3 se obtuvieron parámetros de red de a0= 3.969 y 3.811 Å con una precisión de 92.8 y 97.6% respectivamente de cada pseudopotencial. Se demuestra que el comportamiento de ambas estructuras de bandas tiene una transición electrónica indirecta particular con spin no polarizado, con un ancho de banda prohibida de ∼1.28 eV para el NaNbO3 y ∼2.0 eV para el SrTiO3 con el potencial de intercambio-correlación LDA y una estructura de bandas argumentativa de la fiable aplicación de estos materiales en fase cúbica para dispositivos opto-electrónicos.

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“…由于Ni原子具有多种化合价态, 因此NiO x 薄膜RRAM器件的翻转电压通常弥散性较大 [6] , 数据持久性和循环耐受性也有待进一步提高 [7,8] . 在过去的半个多世纪里, 研究者们通过在NiO x 中掺杂各种电化学活性材料(如Li [9,10] , Ti [11] , P [12] , Mn [13] , Cu [14] , W [15] , Nb [16] 等)改变电阻翻转层载流子浓度; 或者通过插入各种界面缓冲层(如Al 2 O 3 [6] , Ta [17] , Pt [18] , IrO 2 [19] ,…”

Section: Rram核心单元通常为金属-绝缘体-金属三unclassified

Tri-level resistive switching characteristics and conductive mechanism of HfO2/NiOx/HfO2 stacks

Chen,

Zhang,

Yin

et al. 2023

Acta Phys. Sin.

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With the extensive integration of portable computers and smartphones with "Internet of Things" technology, further miniaturization, high reading/writing speed and big storage capacity are required for the new generation of non-volatile memory devices. Compared with traditional charge memory and magnetoresistive memory, resistive random access memory(RRAM) based on transition metal oxides is one of the promising candidates due to its low power consumption, small footprint, high stack ability, fast switching speed and multi-level storage capacity. Inspired by the excellent resistive switching characteristics of NiO and HfO2, NiOx films were deposited by magnetron sputtering on the Pt<111> layer and the polycrystalline HfO2 film, respectively. Their microstructures, resistive switching characteristics and conductive mechanisms were studied. X-ray diffractometer data shows the <111> preferred orientation for the NiOx film deposited on the Pt<111> layer but the <100> preferred one for the film deposited on the polycrystalline HfO2 layer. X-ray photoelectron depth profile of Ni2p core level reveals that the NiOx film is the mixture of oxygen-deficient NiO and Ni2O3. NiOx(111) films show bipolar resistive switching(RS) characteristics with a clockwise current-voltage(I-V) loop, but its ratio of the high resistance to the low resistance(RH/RL) is only~10, and its endurance is also poor. The NiOx(200)/HfO2 stack exhibits bipolar RS characteristics with a counterclockwise I-V loop. The RH/RL is greater than 104, the endurance is about 104 cycles, and the retention time exceeds 104 s. In the initial stage, the HfO2/NiOx(200)/HfO2 stack shows similar bi-level RS characteristics with that of the NiOx(200)/HfO2 stack. However, in the middle and the last stages, it's I-V curves gradually evolve into tri-level RS characteristics with a "two-step Set process" in the positive voltage region, showing potential applications in multilevel nonvolatile memory devices and brain-like neural synapses. Its I-V curves in the high and the low resistance states follow the relationship of Ohmic conduction (I∝V), while the I-V curves in the intermediate resistance state are dominated by the space-charge-limited-current mechanism (I∝V2). The tri-level RS phenomena are attributed to the coexistence of the oxygen-vacancy conductive filaments in the NiOx(200) film and the space charge limited current in the upper HfO2 film.

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Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO

Abstract: We investigated the bipolar resistive switching (BRS) properties of Mn-doped NiO thin films by sol–gel spin-coating.

Cited by 17 publications

References 29 publications

Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

Estudio teórico fundamental comparativo de perovskitas: NaNbO3 y SrTiO3

Tri-level resistive switching characteristics and conductive mechanism of HfO<sub>2</sub>/NiO<sub><i>x</i></sub>/HfO<sub>2</sub> stacks

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