Effect of Mobility on (I-V) Characteristics of Gaas MESFET

Azizi, Mounir; Azizi, Cherifa

doi:10.11591/ijece.v7i1.pp169-175

Cited by 1 publication

(1 citation statement)

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“…The increase in temperature reduces the carrier mobility and change the bandgap of making semiconductors. With the change in temperature, the mobility changes significantly, considering the degradation of electron mobility in GaAs with temperature as T -2/3 [17]. Figure 5(a) and 5(b) shows, respectively, the distribution of mobility of electrons and holes for different temperatures in HBT InGaP.…”

Section: Methodsmentioning

confidence: 99%

Characterization and modeling the effect of temperature on power HBTs InGaP/GaAs

Nadjet¹,

Ghaffour²

2020

IJECE

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The variation and stability of HBT's parameters at different temperatures are important for utilizing these devices in high-power integrated circuits. The temperature dependence of the DC current gain of bipolar transistors, as a key device parameter, has been extensively investigated. A major issue of the power HBT's is that the current gain is decreased with junction temperature due to self-heating effect.Hence, how to stabilize the DC current gain and RF performances is important issue to develop the power HBTs. This work describes the DC and high-frequency temperature dependence of InGaP/GaAs HBT's. The substrate temperature (T) was varied from 25 to 150°C. The static and dynamic performances of the HBT are degraded at high temperature, due to the reduced of carrier mobility with increasing temperature. The current gain (β) decreases at high temperatures; from 140 to 127 at 25 to 150°C, while the decreases in the peak Ft and Fmax are observed from about 110 GHz to 68 GHz and from 165 GHz to 53 GHz respectively in the temperature range of 25 to 150°C.

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Section: Methodsmentioning

confidence: 99%