Effect of molecular weight on the EUV-printability of main chain scission type polymers

Abstract

This study on the main chain scission type polymers, PMMA and a copolymer system, shows that the EUV-printability is proportional to the Mw of the starting material, which is attributed to the enhanced litho-parameters of higher Mw material.

Perfluoroalkylated alternating copolymer possessing solubility in fluorous liquids and imaging capabilities under high energy radiation

“…2c). Thus, in contrast to the poly(-peruorodecyl methacrylate), 7,26,27 the mechanical properties of the P(R F Mi-St) did not deteriorate under e-beam irradiation, thereby demonstrating that one goal of the present study could be achieved through alternating copolymerization of N-per-uoroalkyl maleimide and styrene.…”

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

“…Considering that e-beam and EUV can induce the same chemical reactions, the required expose doses for the e-beam and EUV are expected to be related [94]. In a study at EUV [95] the influence of the PMMA molecular weight and processing parameters was examined. A characteristic EUV dose to clear was found to be 25 mJ/cm 2 whereas crosslinking was observed at a dose of 600 mJ/cm 2 .…”

Electron-induced fragmentation mechanisms in organic monomers and their implications for photoresist optimization for EUV lithography

“…Similar resonances were also observed in our previous study with 40 nm PMMA films (figure 4b). 9 The peak intensity at 2 eV (highlighted) was quite low for PMMA, which could be due to the inability of the fragments to diffuse through the film and reach the RGA setup. Further, the peak at 9 eV for MIB matches the activation energy observed in the PMMA film, which refers to the minimum energy required to induce sufficient bond cleavages to produce volatile fragments that can be detected by the RGA.…”

“…[5][6][7][8] However, this approach does not provide the desired results, as the fundamental understanding of the patterning mechanism of these alternative resist systems is incomplete. 8 In our previous study to understand the EUVL-mechanism, 9 we reported that the secondary electrons generated in the film are responsible for inducing most of the litho-chemistry in the photoresist. This indicates that it is crucial to understand the electron-induced mechanisms of the alternative non-CA EUV-resist systems, to optimize them for HVM.…”

“…Please do not adjust margins Please do not adjust margins of electrons of about 80 eV and below are generated. 9,12 These electrons can cause additional fragmentation reactions in the photoresist molecules through four distinct processes. [13][14][15] (1) Dissociative Ionization (DI):…”