Perfluoroalkylated alternating copolymer possessing solubility in fluorous liquids and imaging capabilities under high energy radiation

Abstract

A highly fluorinated alternating copolymer, P(RFMi-St), possessing patterning capabilities under high energy radiation was achieved with semi-perfluorodecyl maleimide and styrene.

Comprehensive studies of continuous flow reversible addition–fragmentation chain transfer copolymerization and its application for photoimaging materials

“…5 shows the plots for the actual composition as a function of the fed amount with five different monomer pairs including two styrenic monomers, which are for the model copolymers utilizable for the KrF resist and EUV resist. 16,33–36,54 The experimental datasets were effectively interpreted through NLS fitting with the Mayo–Lewis equation; the resulting reactivity ratio values are listed in Table 1. The fitting results with the FR and KT methods are shown and summarized in Fig.…”

Extreme UV Resist Exhibiting Synergism between Chemical and Physical Crosslinking Mechanisms

“…These "8" silicon wafers were diced into 2 × 2 cm 2 pieces and used as Si substrates. 1-(5,5,6,6,7,7,8,8,9,9,10,10,10-Tridecafluorodecyl)-1H-pyrrole-2,5-dione (R F MI6), 20 4-hydroxystyrene (HOST), 27 4-cyano-4-[(dodecylsulfanylthiocarbonyl)sulfanyl]pentanoic acid (CDSTSP), 28 and nonafluorobutanesulfonyloxy-1,8-naphthalimide (NI-Nf) 29 were prepared as previously described.…”

“…Accordingly, we previously proposed single-component EUV resists based on the radical chemistry of fluoroalkylated compounds. 19,20 When a thin film of a fluoroalkylated material is exposed to EUV light, energetic electrons are liberated by photon absorption, which subsequently undergo inelastic scattering in the matrix and release many secondary electrons. 21,22 At this stage, it can be anticipated that the large absorption cross section of F atoms to EUV light also increases the number of secondary electrons that cause solubility changes.…”

Investigation of correlative parameters to evaluate EUV lithographic performance of PMMA

“… 6 In particular, the evaluation of these lithographic parameters is essential for the discovery of novel photoresists and optimization of their performance for application in EUV lithography. For instance, elucidation of the mechanism of the photon–resist interaction, 19 characterization of the chemical compound, 20 and configuration of molecular density of photoresists 21 are critical for directly improving the performance of electronic devices, such as MOSFETs 22 and FinFETs. 23 …”