In this work, we develop mechanically
robust and high-performance
organic thin-film transistors (OTFTs) based on poly(3-hexylthiophene)
(P3HT) regioblock copolymers (block-P3HTs). These block-P3HTs consist of regioregular (rre) and regiorandom (rra) P3HTs, where the highly
crystalline rre block allows efficient charge transport
while the amorphous rra block provides mechanical
robustness and interdomain connection. To examine the effects of the
molecular architecture on the OTFT performance and stretchability,
we prepare a series of block-P3HTs having different
number-average molecular weight (M
n) values
of rra blocks (from 0 to 32 kg mol–1) and a fixed M
n of rre blocks (11 kg mol–1). Thin films of all of the block-P3HTs exhibit a high charge-carrier mobility due to
the formation of well-developed edge-on crystallites from the rre blocks confined within the rra domains,
leading to a hole mobility of 1.5 × 10–1 cm2 V–1 s–1, which is superior
to that of the rre P3HT homopolymer. In addition,
the mechanical toughness of block-P3HT thin films
is remarkably enhanced by the rra block. While the rre P3HT homopolymer thin film shows a brittle behavior
with an elongation at break of only 0.3%, the elongation at break
of the block-P3HT thin films increases by a factor
of 100, yielding 30.2% with increasing M
n of the rra block, without sacrificing the electrical
properties. In particular, a noticeable enhancement of both elongation
at break and toughness is observed between M
n values of the rra block of 8 and 20 kg mol–1, indicating that the critical molecular weight of rra P3HT plays an important role in determining the mechanical
response of the block-P3HT thin films. This study
provides guidelines and strategies to improve the mechanical properties
of organic electroactive materials without the disruption of optoelectrical
properties, which is critical to fabricate high-performance soft electronics.