For ultrahigh-density storage media and D-RAM, the feature size of lithography should be much reduced (say less than 10 nm). Though some research groups reported feature size of 5–6 nm, further reduced feature size is needed for next-generation lithography. We synthesized, via a reversible addition–fragmentation chain-transfer polymerization, polydihydroxystyrene-block-polystyrene (PDHS-b-PS) copolymers showing lamellar and cylindrical microdomains by adjusting the volume fraction of PS block (f PS). We found that the Flory–Huggins interaction parameter (χ) between PDHS and PS was very large, 0.7 at 170 °C. Because of the huge χ, the lamellar domain spacing (L) of PDHS-b-PS with a total molecular weight of 2.1 kg mol–1 and f PS = 0.5 was only 5.9 nm; thus, a sub-3 nm feature size (half-pitch) was successfully obtained. Furthermore, PDHS-b-PS with a molecular weight of 4.2 kg mol–1 and f PS = 0.79 showed hexagonally packed cylinders with 4 nm diameter. We also obtained thin films of PDHS-b-PS with cylindrical microdomains, showing 8.8 nm center-to-center spacing. Furthermore, we fabricated ultrahigh-density ZrO2 nanowire arrays from the cylindrical monolayer thin films via atomic layer deposition, indicating an applicability of PDHS-b-PS for next-generation lithography.

To apply well-defined block copolymer nanopatterns to next-generation lithography or high-density storage devices, small line edge roughness (LER) of nanopatterns should be realized. Although polystyrene-block-poly(methyl methacrylate) copolymer (PS-b-PMMA) has been widely used to fabricate nanopatterns because of easy perpendicular orientation of the block copolymer nanodomains and effective removal of PMMA block by dry etching, the fabricated nanopatterns show poorer line edge roughness (LER) due to relatively small Flory-Huggins interaction parameter (χ) between PS and PMMA chains. Here, we synthesized PS-b-PMMA with urea (U) and N-(4-aminomethyl-benzyl)-4-hydroxymethyl-benzamide (BA) moieties at junction of PS and PMMA chains (PS-U-BA-PMMA) to improve the LER. The U-BA moieties serves as favorable interaction (hydrogen bonding) sites. The LER of PS line patterns obtained from PS-U-BA-PMMA was reduced ∼25% compared with that obtained from neat PS-b-PMMA without BA and U moieties. This is attributed to narrower interfacial width induced by hydrogen bonding between two blocks, which is confirmed by small-angle X-ray scattering. This result implies that the introduction of hydrogen bonding into block copolymer interfaces offers an opportunity to fabricate well-defined nanopatterns with improved LER by block copolymer self-assembly, which could be a promising alternative to next-generation extreme ultraviolet lithography.

Block copolymers with various nanodomains, such as spheres, cylinders, and lamellae, have received attention for their applicability to nanolithography. However, those microdomains are determined by the volume fraction of one block. Meanwhile, nanopatterns with multiple shapes are required for the next-generation nanolithography. Although various methods have been reported to achieve dual nanopatterns, all the methods need sophisticated processes using E-beam. Here, we synthesized a miktoarm block copolymer capable of cleavage of one block by ultraviolet. Original cylindrical nanodomains of synthesized block copolymer were successfully transformed to lamellar nanodomains due to the change of molecular architecture by ultraviolet. We fabricated dual nanopatterns consisting of dots and lines at desired regions on a single substrate. We also prepared dual nanopatterns utilizing another phase transformation from spheres to cylinders in a block copolymer with higher interaction parameter. Since our concept has versatility to any block copolymer, it could be employed as next-generation nanolithography.

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