Effect of N-doped ZnTe layers on   graded superlattices

Taike, A.; Momose, Masayuki; Kawata, M.; Gotoh, Jun; Mochizuki, Kazuhiro

doi:10.1016/0022-0248(95)00645-1

Cited by 7 publications

(7 citation statements)

References 8 publications

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“…This graded superlattice is followed by a ZnTe cap layer of 20 nm thickness. Based on the observation of Taike et al that doping of the entire contact structure resulted in non-ohmic contacts [9], the ZnTe quantum wells in the structure and the first 15 nm of the ZnTe cap were not doped, and only the topmost 5 nm of the ZnTe were heavily doped with nitrogen under the same plasma conditions as used for the p-ZnSe. The growth temperature for these contacts was varied between 250 and 160 • C. The second contact type contains the same multi-quantum-well, but much thinner ZnTe caps (between 10 and 0 nm).…”

Section: Methodsmentioning

confidence: 99%

“…As an example, the device with a record lifetime of 101 h reported by Taniguchi et al needed a threshold voltage of 11 V [8], a value much larger than the lowest voltage of 4.7 V reported by the same group for a diode with a nominally identical contact [6]. This irreproducibility is still stronger when results of different groups are compared, and several workers did not obtain ohmic contacts at all, although the same contact design and equivalent equipment was used [9]. Thus it seems that a further understanding of these contacts is necessary.…”

Section: Introductionmentioning

confidence: 96%

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Processes occurring during the formation of graded ZnSe/ZnTe contacts on p-ZnSe

Faschinger

Nürnberger

Kurtz

et al. 1997

Semicond. Sci. Technol.

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We show that the formation of ohmic contacts to p-ZnSe does not mainly depend on the exact design of the applied ZnSe/ZnTe grading, but rather on the temperature during contact growth and the thickness of the ZnTe cap layer on top of the grading. These facts demonstrate that a diffusion process dominates the contact formation. From the activation energy of the diffusion process we conclude that the diffusing species is nitrogen, which diffuses from the ZnTe cap into the underlying p-ZnSe. The nitrogen excess leads to an overcompensation in the ZnSe. Such an overcompensation process can be quantitatively described by the formation of compensating complexes involving two nitrogen atoms.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

Processes occurring during the formation of graded ZnSe/ZnTe contacts on p-ZnSe

Faschinger

Nürnberger

Kurtz

et al. 1997

Semicond. Sci. Technol.

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“…[1][2][3][4][5] Recent advances in growing high-purity ZnTe semiconductors have renewed interest in this technologically important compound. [6][7][8][9][10][11][12] In order to fabricate optical and electronic devices on this compound, technology for patterning and pattern transfer has to be developed.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of reactive ion etching for zinc telluride using CH4 and H2 gases

Guo¹,

Matsuse²,

Tanaka³

et al. 2001

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

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Articles you may be interested inFabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH 4 / H 2 / Ar plasma on the ZnO/GaN heterojunction light emitting diodes J. Vac. Sci. Technol. A 28, 745 (2010); 10.1116/1.3357282 Electron-cyclotron-resonance plasma etching of the ZnO layers grown by molecular-beam epitaxyWe have studied the characteristics of reactive ion etching for zinc telluride using CH 4 and H 2 gases. The effects of CH 4 /H 2 gas composition, total gas pressure, and plasma power on the etching properties were investigated. It was found that variation of the CH 4 concentration in gas mixtures leads to changes in both the etching rate and the surface morphology. The etching rate of ZnTe increases from 128 to 629 Å/min with increasing the plasma power from 50 to 300 W at a 4% CH 4 concentration and 25 Pa pressure. A smooth etched ZnTe surface was obtained in the range of 4%-16% CH 4 concentration and 10-65 Pa pressure.

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“…6 This irreproducibility is still stronger when results of different groups are compared, and several workers did not obtain ohmic contacts at all, although the same contact design and equivalent equipment was used. 9 Second, aging experiments on laser diodes show that the threshold voltage tends to increase during operation, 10 indicating that a contact degradation takes place during heavy duty operation. Although this did not seem to be factor that limited device lifetimes as long as the density of extended defects was high, it could become important for the structurally more perfect devices that are now available.…”

mentioning

confidence: 99%

“…5, followed by a ZnTe cap layer of 20 nm thickness. Based on the observation of Taike et al that doping of the entire contact structure resulted in nonohmic contacts, 9 the ZnTe quantum wells in the structure and the first 15 nm of the ZnTe cap were not doped, and only the topmost 5 nm of the ZnTe were heavily doped with nitrogen under the same plasma conditions as used for the p-ZnSe. This highly doped ZnTe layer was then contacted with gold which was evaporated without breaking the vacuum in a metallization chamber which is coupled to the MBE system.…”

mentioning

confidence: 99%

Optimization of p-contacts on ZnSe diodes

Nürnberger

Faschinger

Schmitt

et al. 1997

Applied Physics Letters

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We show that a drastic improvement of the current voltage characteristics of a ZnSe diode can be achieved by lowering the growth temperature of a ZnSe/ZnTe multi-quantum well p contact. A similar trend is observed when the thickness of the ZnTe cap layer on top of the multi-quantum well is reduced. Both observations show that the suppression of interdiffusion plays a dominant role in the formation of Ohmic contacts to p-ZnSe. A comparison between a conventional diode and a diode where the p-ZnSe has been replaced by p-ZnSTe shows that the interdiffusion process affects the ZnSe underneath the contact, and not the multi-quantum well contact itself.

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Effect of N-doped ZnTe layers on graded superlattices

Cited by 7 publications

References 8 publications

Processes occurring during the formation of graded ZnSe/ZnTe contacts on p-ZnSe

Processes occurring during the formation of graded ZnSe/ZnTe contacts on p-ZnSe

Characteristics of reactive ion etching for zinc telluride using CH4 and H2 gases

Optimization of p-contacts on ZnSe diodes

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