Effect of N2 addition in Ar plasma on the development of microstructure of ultra-nanocrystalline diamond films

Ferroelectric behaviours of ultra-nano-crystalline diamond thin films

“…This result shows that the conductivity decreases with the increase of % of N 2 /Ar gas incorporation (with increase of nitrogen content) during UNCD preparation. Such behaviours also observed in our previous report on electron field emission study [9] and are similar with the observation of Chen et al [15], in which the electrical properties of nitrogen doped UNCD films increased with the amount of nitrogen incorporated in the plasma. It is noted that the UNCD prepared by Chen et al [15] is at high temperature (~800°C), but our UNCD films are prepared without external temperature and have only at~450°C due to the bombardment of the plasma species during preparation.…”

“…No external heater was used and the substrate temperature was estimated to be around~475°C during the growth of the UNCD films, which was presumably heated due to the bombardment of the plasma species. The thickness of the UNCD films was about 250 nm, which was estimated from a cross-sectional field emission scanning electron microscopic image as described in details in our previous reports [9,10]. The microstructural and bonding properties are measured using Raman and X-ray photoelectron spectroscopy (XPS); …”

Numerical study of the effect of gas flow in low pressure inductively coupled Ar/N2 plasmas

“…As seen in Fig. 5, for the Ar fractions more than 30%, the densities of the N atoms go up over one order The discharge properties by adding small amounts of molecules, such as N 2 , into the pure argon plasmas have been found to be very helpful for improving the plasma properties [21,22]. In the present research, the variations of all the plasma species with the gas flow rates for the case of 95% Ar fractions presents the largest effect of gas flows on the discharge properties of Ar/N 2 ICP plasmas, as indicated in Figs.…”

Nitrogen Incorporated Ultrananocrystalline Diamond Microstructures From Bias‐Enhanced Microwave N2/CH4‐Plasma Chemical Vapor Deposition

“…The CH species are also expected in the N 2 /CH 4 plasma due to the dissociation of CH 4 , but the CH band is completely overlapped with the CN band and cannot be resolved in the OES spectrum in Figure . Apparently, the N 2 , CN (CH), and C 2 are the major components in the plasma, which contributed to the microstructural evolution of diamond and graphite phases …”