2013
DOI: 10.1063/1.4831675
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Effect of nanostructuring on the band structure and the galvanomagnetic properties in Bi1−xSbx alloys

Abstract: Experimenting with hot isostatically pressed (HIP) nano grained bismuth-telluride-based alloys AIP Conf.

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Cited by 18 publications
(37 citation statements)
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“…In former studies only one activated transport channel at around 30 K was observed which is attributed to thermal activation of charge carriers from bulk valence bands into the conduction band channels [9,21,[37][38][39][40]. In this study, only the rise in conductance at high temperatures corresponds to activated bulk transport while the rise at low temperature is of different origin.…”
Section: Resultsmentioning
confidence: 54%
See 1 more Smart Citation
“…In former studies only one activated transport channel at around 30 K was observed which is attributed to thermal activation of charge carriers from bulk valence bands into the conduction band channels [9,21,[37][38][39][40]. In this study, only the rise in conductance at high temperatures corresponds to activated bulk transport while the rise at low temperature is of different origin.…”
Section: Resultsmentioning
confidence: 54%
“…1 Sb x thin films as well as nanostructured samples [9,37]. Surprisingly, transport via robust surface states, as they were seen in spectroscopy [17], was not taken into account in these former transport studies.…”
Section: Surface State Transportmentioning
confidence: 96%
“…In a second experiment the thermal properties of a bismuth-antimony alloy (Bi 0.8 Sb 0.2 ) sample were investigated. The sample was prepared by cold pressing from ball-milled nanoparticles followed by a sintering step and exhibited an electrical conductivity of about 2 × 10 5 Sm −1 at ambient temperature [27]. A temperature sweep in transient mode was performed and the corresponding results for κ and cρ are depicted in Figure 7.…”
Section: Resultsmentioning
confidence: 99%
“…40 The temperature dependence of the electrical conductivity for Bi 0.88Àx Zn x Sb 0.12 is expected to be closely associated with the relative shiing of the T, L s , and L a bands. 41,42 The downturn of electrical conductivity above 300-325 K could be attributed to the semiconductor-semimetal transition, which will be discussed in the following section. Fig.…”
Section: Methodsmentioning
confidence: 99%