Effect of Nd dopant on magnetic and electric properties of BiFeO3 thin films prepared by metal organic deposition method

Huang, Fengzhen; Lü, Xiaomei; Lin, Weiwei; Wu, Xin; Kan, Yi; Zhu, Jinsong

doi:10.1063/1.2404942

Cited by 253 publications

(119 citation statements)

References 25 publications

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“…The first transition observed around 500 K is attributed to a transient interaction between oxygen ion vacancies and Fe 3+ /Fe 2+ . The replacement of some volatile Bi 3+ with non-volatile Re 3+ might have prevented the oxygen ion vacancies stabilizing Fe 3+ /Fe 2+ couple-oxygen vacancy interaction [27][28][29]. As BiFeO 3 is known to exhibit antiferromagnetic transition (T N ) at 643 K and a ferroelectric transition at 1103 K, the transitions observed in BFO, BLFO and BYFO at 645, 693 and 673 K, respectively, may also be attributed to the onset of antiferromagnetism in these materials.…”

Section: Dielectric Constantmentioning

confidence: 99%

Structural, Magnetic and Dielectric Properties of Bi0.9Re0.1FeO3(Re = La, Sm, Gd and Y)

Zhu

Kumar

Zhong

et al. 2015

J Supercond Nov Magn

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With a view to understand the influence of rare earth ion doping on the structural, magnetic and dielectric properties of bismuth ferrite, a series of samples were prepared by the solidstate reaction method. After characterizing the samples with XRD and SEM studies, the magnetic and dielectric measurements were carried out. It is interesting to note that the two impurity phases, viz., orthorhombic Bi 2 Fe 4 O 9 and cubic Bi 25 FeO 40 observed in undoped bismuth ferrite are found to vanish with rare earth doping. Further, the remnant magnetization (M r ) values are found to increase with increasing ionic radii of dopant rare earth ion. Interestingly, among all the samples, La doped BiFeO 3 sample is exhibiting negative magnetization at low temperatures. The dielectric constant is found to exhibit two transitions above room temperature. Efforts have been made to explain the observed structural, magnetic and dielectric behaviours of the materials.

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Section: Dielectric Constantmentioning

confidence: 99%

Structural, Magnetic and Dielectric Properties of Bi0.9Re0.1FeO3(Re = La, Sm, Gd and Y)

Zhu

Kumar

Zhong

et al. 2015

J Supercond Nov Magn

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“…[4][5][6][7][8][9][10][11]15 The site-engineering technique is quite important from industrial aspects because this technique can be applied to most deposition methods. However, it is not easy to reduce the leakage current of BFO films by a single ion-doping method since the excess substitution causes an increase in leakage current in the films.…”

mentioning

confidence: 99%

“…6,7 Besides, modification of electrical properties of BFO films by ion doping at Bi site is quite difficult because of the degradations in ferroelectric properties, although rare-earth elements doped at Bi site is effective to reduce the impurity phases due to bismuth and oxygen vacancies. 5,8,9 Therefore, we propose a new combination of Mn and Ti as codoping elements for Fe site of BFO thin films. In this work, we report the synthesis and characterization of ͑Mn, Ti͒-codoped BFO ͑BFMT͒ thin films by comparing with those of pure BFO, Ti-doped BFO ͑BFT͒, and Mn-doped BFO ͑BFM͒ thin films.…”

mentioning

confidence: 99%

Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films

Kawae¹,

Terauchi²,

Tsuda³

et al. 2009

Applied Physics Letters

235

102

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Polycrystalline BiFeO 3 ͑BFO͒, Ti-doped BFO, Mn-doped BFO, and ͑Mn, Ti͒-codoped BFO ͑BFMT͒ thin films were fabricated on Pt/ SrTiO 3 ͑100͒ substrate by pulsed laser deposition. Observed leakage current behavior in those ion-doped BFO films indicated the dominance of space-charge-limited current in the high electric field region. The leakage current of the BFMT film was much reduced in relation to the other films due to the formation of deep traps. In the BFMT film, well saturated P-E hysteresis curves were observed. Remanent polarization and coercive field for maximum electric field of 2100 kV/cm were 75 C / cm 2 and 310 kV/cm, respectively. © 2009 American Institute of Physics. ͓DOI: 10.1063/1.3098408͔ Excellent ferro-/piezoelectric properties have been reported in the BiFeO 3 ͑BFO͒ thin films comparable to those of Pb͑Zr x Ti 1−x ͒O 3 , 1-3 and thus the BFO is expected as an alternative Pb-free ferro-/piezoelectric material. However, the large leakage current of BFO thin films at room temperature ͑RT͒ is known to be a serious problem, which could limit the various applications of this material.In the past several years, site-engineering technique by substitution of small amount of impurities was proposed to solve this problem, and reduced leakage current properties were reported. [4][5][6][7][8][9][10][11]15 The site-engineering technique is quite important from industrial aspects because this technique can be applied to most deposition methods. However, it is not easy to reduce the leakage current of BFO films by a single ion-doping method since the excess substitution causes an increase in leakage current in the films. 6,7 Besides, modification of electrical properties of BFO films by ion doping at Bi site is quite difficult because of the degradations in ferroelectric properties, although rare-earth elements doped at Bi site is effective to reduce the impurity phases due to bismuth and oxygen vacancies. 5,8,9 Therefore, we propose a new combination of Mn and Ti as codoping elements for Fe site of BFO thin films. In this work, we report the synthesis and characterization of ͑Mn, Ti͒-codoped BFO ͑BFMT͒ thin films by comparing with those of pure BFO, Ti-doped BFO ͑BFT͒, and Mn-doped BFO ͑BFM͒ thin films. Moreover, it is required to reduce the leakage current of BFO films in the high electric field region ͑at least more than 400 kV/cm͒ since coercive electric fields of BFO film capacitors are generally 300-500 kV/cm. Hence, we also discuss the change in conduction mechanism in the high electric field region by ion doping in the BFO thin films.BFO, BFT, BFM, and BFMT thin films were deposited on Pt-coated ͑100͒ SrTiO 3 ͑STO͒ substrates with thicknesses ranging from 220 to 240 nm, using a conventional pulsed laser deposition ͑PLD͒ system. The ceramic targets with metal compositions of Bi 1.1 FeO 3 , Bi͑Fe 0.98 Ti 0.02 ͒O 3 , Bi 1.1 ͑Fe 0.97 Mn 0.03 ͒O 3 , and Bi͑Fe 0.95 Mn 0.03 Ti 0.02 ͒O 3 were used for deposition of BFO, BFT, BFM, and BNFM films, respectively. The details of thin film fabrication were described...

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“…Dzyaloshinskii-Moriya (DM) interaction is the possible mechanism for this weak ferromagnetism. The DM interaction [27][28][29] in these samples is enhanced by the increased rotation of distorted FeO 6 octahedra with increase in ionic radii of the dopant. This is confirmed by the change in the bond angle and bond distances.…”

Section: Magnetic Propertiesmentioning

confidence: 94%

Crystal structure and magnetic properties of Bi0.8A0.2FeO3 (A = La, Ca, Sr, Ba) multiferroics using neutron diffraction and Mossbauer spectroscopy

et al. 2014

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Bi0.8A0.2FeO3 (A = La, Ca, Sr, Ba) multiferroics were studied using x-ray, neutron diffraction and magnetization techniques. All the samples crystallized in rhombohedral structure with space group R3c. The compounds exhibit antiferromagnetic (AFM) ordering at 300 K and no evidence of further structural or magnetic transition was observed on lowering of temperature below it. The magnetic structure of these substituted compounds are found to be collinear G-type AFM structure as against the non collinear incommensurate magnetic structure reported in the case of parent compound. The moments on Fe at 6 K are aligned along the a-axis in the case of Ca-doped sample. With increase in the ionic radii of dopant, the moments are found to be aligned in the ac plane and the angle of tilt away from the a-axis increases. The observed change in the magnetic structure with substitution is attributed to the intrinsic structural distortion as evidenced by the change in the bond angle (Fe-O-Fe) and bond distances (Bi-O, Fe-O). It has been found that heterovalent substitution A2+ results in the formation of oxygen vacancies in the parent lattices as the possibility of Fe4+ ruled out by Mössbauer spectra recorded at room temperature. Higher value of remnant magnetization (0.4187 emu/g) and coercivity (4.7554kOe) is observed in Bi0.8Ba0.2FeO3 sample in comparison to other substituted samples revealing a strong correlation between ionic radii and magnetization.

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Effect of Nd dopant on magnetic and electric properties of BiFeO3 thin films prepared by metal organic deposition method

Cited by 253 publications

References 25 publications

Structural, Magnetic and Dielectric Properties of Bi0.9Re0.1FeO3(Re = La, Sm, Gd and Y)

Structural, Magnetic and Dielectric Properties of Bi0.9Re0.1FeO3(Re = La, Sm, Gd and Y)

Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films

Crystal structure and magnetic properties of Bi0.8A0.2FeO3 (A = La, Ca, Sr, Ba) multiferroics using neutron diffraction and Mossbauer spectroscopy

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