Effect of neodymium substitution on crystalline orientation, microstructure and electric properties of sol-gel derived PZT thin films

Li, Qi; Wang, Xing; Wang, Fuan; Chen, Da; Xiao, Xiaolei; Zou, Helin

doi:10.1016/j.ceramint.2018.01.197

Cited by 20 publications

(12 citation statements)

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“…This is because proper doping enhanced the crystallinity, thus making the surface denser. 7,[11][12][13] After increasing the Nb concentration up to 3%, some pores began to appear, and the surface of the film became uneven. At the 4% Nbdoped, grains began to aggregate near the grain boundaries, and grain growth was inhibited.…”

Section: Resultsmentioning

confidence: 99%

“…6 The characteristics of PZT films depend on the annealing temperature, dopant, and stoichiometry control. 7,8 The largest mechanical/electrical conversion efficiency is obtained when the Zr/Ti ratio is 52/48. 9 Doping is an effective way to enhance material properties.…”

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“…Many researchers have done work to evaluate electrical characteristics by doping with La, Gd, Nb, Mn, etc. 7 It has been proven that donor dopants are an effective method by which to improve the electrical characteristics of PZT films because this method prevents the formation of oxygen vacancies. 7 In particular, Nb demonstrates significantly improved electrical characteristics.…”

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confidence: 99%

“…7 It has been proven that donor dopants are an effective method by which to improve the electrical characteristics of PZT films because this method prevents the formation of oxygen vacancies. 7 In particular, Nb demonstrates significantly improved electrical characteristics. 7 Nb ions occupy Bsite (Ti or Zr) ions because of the similar ion radius.…”

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confidence: 99%

“…7 In particular, Nb demonstrates significantly improved electrical characteristics. 7 Nb ions occupy Bsite (Ti or Zr) ions because of the similar ion radius. Nb doping effects in PZT thin films have been researched, but there are few studies on Nb-doped thick films (with thicknesses > 1 μm), and information on the properties of the proposed films are not adequate.…”

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Effects of Nb Doping on Crystalline Orientation, Microstructure and Electrical Properties of Non-Stoichiometric PZT Thick Films via Hybrid Sol-Gel Method

Lee

Tsai

Liou

et al. 2021

ECS J. Solid State Sci. Technol.

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In this research, a hybrid sol-gel method was used to fabricate Pb(Zr 0.52 Ti 0.48 ) 1−x Nb x O 3 PZT-based piezoelectric thick films. By preparing sol-gel solutions with different Nb concentrations (x = 0%-4%) and mixing them with PZT-5A piezoelectric powders, the microstructure and electrical properties were improved. The X-ray diffraction (XRD) and scanning electron microscope (SEM) results showed that PZT films with 2% Nb doping exhibited high crystallinity and dense surfaces. The maximum dielectric constant, piezoelectric coefficient d 33 of 133(pm V −1 ), and remnant polarization value of 58(μC cm −2 ) were obtained in a 2% Nbdopant. These data were much better than the published results. Roughness and dielectric loss were also improved significantly with 2% Nb dopants.

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