Effect of NH3 on the preparation of TiNx films by laser CVD using tetrakis-diethylamido-titanium

Gong, Yansheng; Tu, Rong; Goto, Takashi

doi:10.1016/j.jallcom.2009.05.137

Cited by 11 publications

(4 citation statements)

References 23 publications

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“…Such a nanocrystalline structure is not unique to diamond but very general in thin films of other systems prepared, in particular, at low substrate temperatures by CVD, laser ablation and even some sputtering. For example, the Si cauliflower structure aggregated by 10 nm particles was grown by HWCVD [154], the ZrO 2 cauliflower structure by thermal CVD [39], the ZnO 2 cauliflower structure by combustion CVD [155], the TiN x cauliflower structure by laser CVD [156] and the platinum cauliflower structure by RF sputtering [157].…”

Section: Nanocrystalline Diamond and Cauliflower Structurementioning

confidence: 99%

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

Hwang¹,

Lee²

2010

J. Phys. D: Appl. Phys.

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The critical role of charged nanoclusters and nanoparticles in the growth of thin films and nanostructures by chemical vapour deposition (CVD) is reviewed. Advanced nanoparticle detection techniques have shown that charged gas-phase nuclei tend to be formed under conventional processing conditions of thin films and nanostructures by thermal, hot-wire and plasma CVD. The relation between gas-phase nuclei and thin film and nanostructure growth has not been clearly understood. In this review it will be shown that many films and nanostructures, which have been believed to grow by individual atoms or molecules, actually grow by the building blocks of such charged nuclei. This new growth mechanism was revealed in an attempt to explain many puzzling phenomena involved in the gas-activated diamond CVD process. Therefore, detailed thermodynamic and kinetic analyses will be made to draw the conclusion that the well-known phenomenon of deposition of less stable diamond with simultaneous etching of stable graphite should be an indication of diamond growth exclusively by charged nuclei formed in the gas phase. A similar logic was applied to the phenomenon of simultaneous deposition and etching of silicon, which also leads to the conclusion that silicon films by CVD should grow mainly by the building blocks of charged nuclei. This new mechanism of crystal growth appears to be general in many CVD and some physical vapour deposition (PVD) processes. In plasma CVD, this new mechanism has already been utilized to open a new field of plasma-aided nanofabrication.

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Section: Nanocrystalline Diamond and Cauliflower Structurementioning

confidence: 99%

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

Hwang¹,

Lee²

2010

J. Phys. D: Appl. Phys.

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“…We introduced a continuous high-power laser to enhance the chemical reaction in the MOCVD process (laser-assisted MOCVD), and high deposition rates were achieved with various oxide (Al 2 O 3 , CeO 2 and BaTi 2 O 5 ) [11][12][13] and non-oxide (SiC and TiN) [14,15] films. Although c-axisoriented YBCO films have also been obtained on Al 2 O 3 polycrystalline substrates [16] and (100) MgO and (100) LaAlO 3 single-crystal substrates [17,18], c-axis-oriented YBCO films that exhibit satisfactory superconductivity, i.e.…”

Section: Introductionmentioning

confidence: 99%

High-speed growth of YBa₂Cu₃O_7−δsuperconducting films on multilayer-coated Hastelloy C276 tape by laser-assisted MOCVD

Zhao¹,

Ito²,

Kato³

et al. 2013

Supercond. Sci. Technol.

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The high-speed epitaxial growth of YBa 2 Cu 3 O 7−δ (YBCO) superconducting films on multilayer (CeO 2 /LaMnO 3 /MgO/Gd 2 Zr 2 O 7 )-coated Hastelloy C276 tape was demonstrated using laser-assisted metal-organic chemical vapour deposition (laser-assisted MOCVD). The preferred orientation of the YBCO films changed from a-axis to c-axis as the deposition temperature was increased from 769 to 913 K. The c-axis-oriented YBCO film exhibited a high critical temperature of 90 K and a high critical current density of 0.5 MA cm −2 even at a high deposition rate of 55 µm h −1 .

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“…In addition, at low deposition temperature and within a short time, CVD technology can well control the size and structure of the coating --single layer coating, multi-layer coating, composite coating, nanostructure and functional gradient coating [9]. CVD is a flexible technology that can complement other technologies such as laser, plasma, vacuum and thermal spraying [10][11][12][13][14]. However, the high ambient temperature required by CVD technology limits its application in tool coating.…”

Section: Chemical Vapor Deposition Techniquementioning

confidence: 99%

Advances in Preparation Technology of Tool Coatings

Ouyang¹

2023

AJST

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With the continuous development of modern industry and the difficult-to-machine materials gradually increases, the machining requirements of cutting tools continue to improve and the cutting environment is increasingly harsh. As the coating applies, the efficiency and precision of machining have been effectively improved. Coating on the tool surface can not only extend the service life of the cutting tool, greatly reduce the processing cost, but also reduce the environmental pollution in the process of processing. Excellent coating preparation technology is an important factor for its effective performance. According to different processing requirements, processing costs and processing environment, researchers have been working hard on the road of coating preparation technology. In this work, it summarizes the principle of physical vapor deposition, chemical vapor deposition and the corresponding advantages and disadvantages, and briefly introduces the pulsed DC magnetron sputtering, high power pulsed magnetron sputtering, arc ion plating and a variety of composite magnetron sputtering technologies.

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Effect of NH3 on the preparation of TiNx films by laser CVD using tetrakis-diethylamido-titanium

Cited by 11 publications

References 23 publications

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

High-speed growth of YBa₂Cu₃O_7−δsuperconducting films on multilayer-coated Hastelloy C276 tape by laser-assisted MOCVD

Advances in Preparation Technology of Tool Coatings

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Effect of NH3 on the preparation of TiNx films by laser CVD using tetrakis-diethylamido-titanium

Cited by 11 publications

References 23 publications

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

High-speed growth of YBa2Cu3O7−δsuperconducting films on multilayer-coated Hastelloy C276 tape by laser-assisted MOCVD

Advances in Preparation Technology of Tool Coatings

Contact Info

Product

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About

High-speed growth of YBa₂Cu₃O_7−δsuperconducting films on multilayer-coated Hastelloy C276 tape by laser-assisted MOCVD