Effect of nitric acid on wet etching behavior of Cu/Mo for TFT application

Seo, Bo-Hyun; Lee, Sanghyuk; Park, Insun; Seo, Jong Hyun; Choe, HeeHwan; Jeon, Jae‐Hong; Hong, MunPyo

doi:10.1016/j.cap.2010.11.095

Cited by 24 publications

(9 citation statements)

References 3 publications

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“…Several methods are proposed to resolve this problem, by introducing an extra layer at the interface as a diffusion barrier and adhesion layer, such as Cu/Ti [8,9], Cu/Ta [10], Cu/Mn [11], or Cu/Mo [12,13]. However, the extra functional layer gives rise to a complex pattern process.…”

Section: Introductionmentioning

confidence: 99%

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

Peng

et al. 2017

Applied Sciences

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Abstract:The characteristics of Cu alloy (0.3 wt. % Cr, 0.2 wt. % Zr) thin film deposited by direct current (DC) magnetron sputtering deposition were investigated. The conductivity and adhesion of the Cu-0.3%Cr-0.2%Zr films were optimized by increasing the sputter power to 150 W and reducing the sputter pressure to 2 mTorr. With an annealing process (at 300 • C for 1 h in argon ambient atmosphere), the resistivity of the alloy film decreased from 4.80 to 2.96 µΩ·cm, and the adhesion classification increased from 2B to 4B on glass substrate. X-ray photoelectron spectroscopy (XPS) analysis showed that Cr aggregated toward the surface of the film and formed a self-protection layer in the annealing process. Transmission electron microscopy (TEM) indicated the aggregation and migration of Cr in the annealing process. A further X-ray diffraction (XRD) analysis showed that Cu 2 O appeared when the annealing temperature reached above 350 • C, which accounts for the increase of the resistivity. Based on Al 2 O 3 and SiO 2 substrate surfaces, the Cu-0.3%Cr-0.2%Zr film also showed high conductivity and adhesion, which has a potential in the application of Cu gate electrodes for thin film transistor (TFT).

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Section: Introductionmentioning

confidence: 99%

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

Peng

et al. 2017

Applied Sciences

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“…As well known, copper/molybdenum (Cu/Mo) layers have been widely used in consumer electric devices because the copper has a low adhesion force against the glass substrate 19–21 . The metal line patterns are always fabricated by the wet etching process.…”

Section: Experiments and Resultsmentioning

confidence: 99%

Eliminating light depolarization from metal microstructure in liquid crystal displays

Chen

Lin²,

Zhao

et al. 2020

J Soc Info Display

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A structure of copper/molybdenum/titanium conductive layer with a very long tail of titanium under copper is introduced to eliminate the depolarization problem from metal microstructures for the first time. The electric field of light is blocked by the 20‐nm thin titanium tail (200 nm) layer, and the depolarization of light at the corner of the conductive line disappears in the liquid crystal display (LCD). As a result, the contrast ratio of the LCD is increased by 18%.

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“…significant undercut of Mo oxide below the Cu layer after the stripping and rinsing process when used as bottom layer. Behavior of Mo material in different etching solutions has been investigated by other authors using polarization curves [2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

48.4: Galvanic Corrosion of Molybdenum Alloys and Oxides in contact with Copper for Thin Film Transistors using Evans Diagrams

Riedl

Mori

Schmidt

et al. 2021

Symp Digest of Tech Papers

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To eliminate material loss during photolithographic processes in Thin Film Transistor production three different Molybdenum materials have been investigated. Galvanic corrosion behavior was investigated by measuring Evans diagrams in contact with Copper. Results have shown that it is of crucial importance that a Mo material contains a passivating element in a proper concentration to form a stable passive layer to avoid attack caused by the electrolyte. Also water content of the electrolyte plays an important role for material behavior.

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Effect of nitric acid on wet etching behavior of Cu/Mo for TFT application

Cited by 24 publications

References 3 publications

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

Eliminating light depolarization from metal microstructure in liquid crystal displays

48.4: Galvanic Corrosion of Molybdenum Alloys and Oxides in contact with Copper for Thin Film Transistors using Evans Diagrams

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