Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Calabretta, Cristiano; Scuderi, Viviana; Anzalone, Ruggero; Mauceri, Marco; Crippa, Danilo; Cannizzaro, Annalisa; Boninelli, Simona; Via, F. La

doi:10.3390/ma14164400

Cited by 10 publications

(8 citation statements)

References 29 publications

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“…The evolution of the SF density shows the same trend as for the growth of 3C‐SiC using CVD. [ 31 ] N 2 is reported to increase the formation energy of SFs in 3C‐SiC and has a selective role in the disclosing of 6H‐like SF during the growth of 3C‐SiC. [ 32,33 ] Despite the fact the SF density is reduced for increased doping levels, the average length of the remaining SFs increases.…”

Section: Resultsmentioning

confidence: 99%

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Kollmuß

Via

Wellmann

2023

Cryst. Res. Technol.

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A systematic approach to determine the most crucial growth parameters and their effect on the surface morphology and defect density of sublimation grown (001) cubic silicon carbide (3C‐SiC) is conducted. Close space physical vapor transport (CS‐PVT) growth on 3C‐SiC and 4° off oriented homoepitaxial chemical vapor deposition (CVD) grown seeding layers is performed. For each growth run, one growth parameter, e.g., temperature, pressure, or N2 flux is varied, while the other parameters are kept constant. Raman spectroscopy, potassium hydroxide (KOH) etching, as well as optical microscopy and atomic force microscopy (AFM) are used for the sample characterization. Step‐flow‐controlled growth is observed on all grown samples, while the stacking fault density is generally reduced with respect to the seeding layers. Increased temperature as well as increased pressure leads to roughening of the growth surface attributed to step bunching, while their effect on the stacking fault density seems to be only minor in the analyzed parameter range. Areas of strongly enhanced step bunching are present on all samples, and this effect is more pronounced at higher temperature and pressure. Increased nitrogen doping leads to a decreased stacking fault density but also increases the length of remaining stacking faults. The surface morphology is influenced by N2 on a macroscopic level rather than on microscopic scale.

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Section: Resultsmentioning

confidence: 99%

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Kollmuß

Via

Wellmann

2023

Cryst. Res. Technol.

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“…The sum of these two contributions is positive for Si (compressive stress) and negative for SiC (tensile stress), in agreement with our results. Furthermore, because of the different doping influences and the type and density of defects [ 9 , 10 ], this effects the static strain fluctuations and therefore the final stress value.…”

Section: Resultsmentioning

confidence: 99%

“…The possibility of understanding how doping influences the distribution of defects [ 9 , 10 ], and therefore of the stress inside 3C-SiC films, is an aspect with important repercussions both in the microelectronics sector and in that of micro electromechanical systems. The crystallographic quality and the excessive curvature of the wafers are two of the aspects that today hold back the development of microelectronic devices.…”

Section: Resultsmentioning

confidence: 99%

“…Other approaches were suggested, such as the use of porous silicon (p-Si) as a substrate [8] or the growth on a SiGe buffer layer or on a silicon pillars [9]. Recently, we observed that nitrogen and aluminum doping concentrations have a deep impact on the density and the average length of the staking faults (SFs) that reach the surface and so on during the bending of the wafer [10,11]. The use of complementary analysis techniques and processes is necessary to fully understand the effect of doping on the stress distribution along the c-axis (especially at the interface, where the concentration of defects is highest).…”

Section: Introductionmentioning

confidence: 99%

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Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy

2023

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In this paper, we used micro-Raman spectroscopy in cross-section to investigate the effect of different doping on the distribution of stress in the silicon substrate and the grown 3C-SiC film. The 3C-SiC films with a thickness up to 10 μm were grown on Si (100) substrates in a horizontal hot-wall chemical vapor deposition (CVD) reactor. To quantify the influence of doping on the stress distribution, samples were non-intentionally doped (NID, dopant incorporation below 1016 cm−3), strongly n-type doped ([N] > 1019 cm−3), or strongly p-type doped ([Al] > 1019 cm−3). Sample NID was also grown on Si (111). In silicon (100), we observed that the stress at the interface is always compressive. In 3C-SiC, instead, we observed that the stress at the interface is always tensile and remains so in the first 4 µm. In the remaining 6 µm, the type of stress varies according to the doping. In particular, for 10 μm thick samples, the presence of an n-doped layer at the interface maximizes the stress in the silicon (~700 MPa) and in the 3C-SiC film (~250 MPa). In the presence of films grown on Si(111), 3C-SiC shows a compressive stress at the interface and then immediately becomes tensile following an oscillating trend with an average value of 412 MPa.

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“…In previous work, we observed that nitrogen doping concentration has a deep impact on the density and the average length of the SFs that reach the surface. As the nitrogen concentration increases, the average length of the SFs increases, from a value of 2 μm (intrinsic sample) to 5 μm (5.8 × 10 19 atom/cm 3 ), and the density decreases, from 2050 cm –1 (intrinsic sample) to 244 cm –1 (5.8 × 10 19 atom/cm 3 ).…”

Section: Introductionmentioning

confidence: 94%

Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

Calabretta

Scuderi

Bongiorno

et al. 2022

Crystal Growth & Design

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Despite the promising properties, the problem of cubic silicon carbide (3C-SiC) heteroepitaxy on silicon has not yet been resolved and its use in microelectronics is limited by the presence of extensive defects. In this paper, we used microphotoluminescence (μ-PL), molten KOH etching, and high-resolution scanning transmission electron microscopy (HRSTEM) to investigate the effect of nitrogen doping on the distribution of stacking faults (SFs) and assess how increasing dosages of nitrogen during chemical vapor deposition (CVD) growth inhibits the development of SFs. An innovative angle-resolved SEM observation approach of molten KOH-etched samples resulted in detailed statistics on the density of the different types of defects as a function of the growth thickness of 3C-SiC free-standing samples with varied levels of nitrogen doping. Moreover, we proceeded to shed light on defects revealed by a diamond-shaped pit. In the past, they were conventionally associated with dislocations (Ds) due to what happens in 4H-SiC, where the formation of pits is always linked with the presence of Ds. In this work, the supposed Ds were observed at high magnification (by HRSTEM), demonstrating that principally they are partial dislocations (PDs) that delimit an SF, whose development and propagation are suppressed by the presence of nitrogen. These results were compared with VESTA simulations, which allowed to simulate the 3C-SiC lattice to design two 3C-lattice domains delimited by different types of SFs. In addition, through previous experimental evidence, a preferential impact of nitrogen on the closure of 6H-like SFs was observed as compared to 4H-like SFs.

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Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Cited by 10 publications

References 29 publications

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy

Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

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