2010
DOI: 10.1002/pssa.200983750
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Effect of nitrogen doping on photoresponsivity of ZnO films

Abstract: Investigations of photoelectrical properties of ZnO films are important scientific task for designing UV detectors for various applications. We report the positive role of nitrogen doping in increasing photoresponsivity of ZnO:N-based detectors. It is suggested that nitrogen slightly deteriorates the structural quality of ZnO films and compensates intrinsic defects that increase photoresponsivity. Also, the spectral response of Ni/ZnO:N/n þ -Si structures at different biases were considered.

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Cited by 17 publications
(7 citation statements)
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“…Zinc oxide (ZnO) has been considered as a promising candidate material in ultraviolet (UV) photodetectors due to its wide bandgap, high electron saturation velocity and high radiation resistance, etc. 1–8. By alloying with MgO, the bandgap of ZnO can be tuned from 3.37 eV to 7.8 eV, which corresponds to a wavelength range of 160–370 nm 9, 10.…”
Section: Introductionmentioning
confidence: 99%
“…Zinc oxide (ZnO) has been considered as a promising candidate material in ultraviolet (UV) photodetectors due to its wide bandgap, high electron saturation velocity and high radiation resistance, etc. 1–8. By alloying with MgO, the bandgap of ZnO can be tuned from 3.37 eV to 7.8 eV, which corresponds to a wavelength range of 160–370 nm 9, 10.…”
Section: Introductionmentioning
confidence: 99%
“…No other contamination was found. The values of measurement errors in determination of atomic composition for O, Cu and Al were ±0.2 at.% [12].…”
Section: Resultsmentioning
confidence: 86%
“…The nature of this mode is still thoroughly unknown. The mode at 275 cm −1 was found in Raman spectra of doped ZnO by nitrogen [17][18][19], by Al-N [20], and by Fe, Sb, Al, Ga, and Li [21]. This mode also appears in the Raman spectra of undoped ZnO films [22].…”
Section: Sem Images Ofmentioning
confidence: 87%