Effect of nitrogen on the properties of nanostructured zinc nitride heterojunction prepared by reactive magnetron sputtering

Addie, Ali J.; Mohammed, Mudhafar A.; Ismail, Raid A.

doi:10.1016/j.mssp.2022.106664

Cited by 7 publications

(3 citation statements)

References 73 publications

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“…The E opt,g values were 3.00 (ZnON 1), 2.84 (ZnON 2), 2.11 (ZnON 3), 1.90 (ZnON 4), and 1.84 eV (ZnON 5). The lowest value of 1.84 eV is reasonable considering that the E opt,g of Zn 3 N 2 ranged from 1.0 to 1.5 eV, ,, and the oxygen composition of our ZnON would be high based on the fact that our target was ZnO.…”

Section: Resultsmentioning

confidence: 75%

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

Jang

Lee

2022

ACS Appl. Electron. Mater.

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We present comprehensive studies on ZnON thin films deposited by radio-frequency (RF) magnetron sputtering using a ZnO target under various nitrogen plasma conditions. A ZnON thin film grown under the highest nitrogen partial flow rate exhibits the lowest optical bandgap of 1.84 eV, excellent stability upon air exposure, an amorphous/nanocrystalline structure, and the strongest stoichiometric Zn3N2 chemical states. The highest field-effect mobility of 4.28 cm2 V–1 s–1, the largest responsivity, and the negligible persistent photoconductivity (PPC) effect against visible light are also realized by the thin-film transistor (TFT) configuration. The device performance of the ZnON phototransistor is compared to those of other oxide semiconductors of ZnO and InGaZnO (IGZO). Finally, an IGZO/ZnON phototransistor, where ZnON was deposited on top of IGZO by an in situ process, demonstrates high specific detectivities (1.65 × 1013, 1.35 × 1013, and 2.0 × 1014 Jones against red, green, and blue photons, respectively) without the PPC effect. We examined the photoluminescence (PL) spectra of ZnON with respect to nitrogen-associated defects, which are yet to be discussed, and emphasize that our optimum deposition process is free of the poisoning effect. To our knowledge, this is the first report on a ZnON phototransistor in which the channel was prepared by reactive sputtering of a ZnO target.

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Section: Resultsmentioning

confidence: 75%

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

Jang

Lee

2022

ACS Appl. Electron. Mater.

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“…As seen, three types of vibration peaks corresponding to the three compounds are observed from the Raman spectra of the Co 3 O 4 NPs/Co–Zn nitride. The peaks at 265 cm −1 are concerned with the Raman-active photo modes in the Zn 3 N 2 phase, 57 while the peaks at 473, 513, and 667 cm −1 are in line with the cobalt nitride phase. 58 In addition, the other smaller peaks at 482 and 512 cm −1 can be attributed to the E g , F 2g , and A 1g vibration modes of Co 3 O 4 , respectively.…”

Section: Resultsmentioning

confidence: 99%

Ultrafine Co₃O₄ nanoparticles-engineered binary metal nitride nanorods with interfacial charge redistribution for enhanced water splitting

Nguyen,

Luyen Doan,

Zhu

et al. 2023

J. Mater. Chem. A

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“…The XRD peaks are attributed to the formation of an alloy within the film structure, blending the hexagonal wurtzite ZnO and cubic Zn 3 N 2 . The Raman peak at 239 cm −1 is related to the Zn-N bonding configurations and is believed to result from local vibrational modes (LVMs) induced by intrinsic lattice defects in the Zn 3 N 2 films [44]. The origin of the Raman band located in the range of 566 to 595 cm −1 has been variously attributed by different researchers to local vibrational modes related to nitrogen, lattice defects within the host, and a fusion of local vibrational modes and disorder-activated scattering [45] [43] [46].…”

Section: Structural Transitionmentioning

confidence: 99%

DC reactive sputtering of ZnON thin films: band gap engineering and associated evolution of microstructures

J G,

Jose,

Nair

et al. 2024

Mater. Res. Express

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Zinc oxynitride (ZnON) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate ZnON films with varying elemental concentrations, by precisely controlling the working pressure. The working pressure was varied from 0.004 mbar to 0.026 mbar.For working pressure greater than 1.6 x 10$^{-3}$mbar, the mean free path of ions decrease, the sputtering rate decreases and the concentration of nitrogen in the films decreases. The band gap of the film obtained from UV Vis Spectroscopy initially decreases and reaches a minimum of 1.6 eV at a flow rate of 20 sccm of nitrogen, after which it drastically increases. The correlation between the micro structure and band gap was investigated. The initial alloy structure of the film was found to exist when the band gap was between 1.66 eV and 2.15 eV, beyond which, a distorted wurtzite structure began to emerge. At a band gap of 2.7 eV, the spectrum peaks indicated the coexistence of both alloy and wurtzite structures. With an increasing band gap, the wurtzite structure became dominant, completely replacing the alloy structure at 3.25 eV. This study revealed the existence of intermediate structures formed during the tuning of the band gap, which can have important implications for future research aimed at developing heterostructures and 2D superlattices for photonics applications.

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Effect of nitrogen on the properties of nanostructured zinc nitride heterojunction prepared by reactive magnetron sputtering

Cited by 7 publications

References 73 publications

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

Ultrafine Co₃O₄ nanoparticles-engineered binary metal nitride nanorods with interfacial charge redistribution for enhanced water splitting

DC reactive sputtering of ZnON thin films: band gap engineering and associated evolution of microstructures

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Effect of nitrogen on the properties of nanostructured zinc nitride heterojunction prepared by reactive magnetron sputtering

Cited by 7 publications

References 73 publications

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

Ultrafine Co3O4 nanoparticles-engineered binary metal nitride nanorods with interfacial charge redistribution for enhanced water splitting

DC reactive sputtering of ZnON thin films: band gap engineering and associated evolution of microstructures

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Ultrafine Co₃O₄ nanoparticles-engineered binary metal nitride nanorods with interfacial charge redistribution for enhanced water splitting