Effect of nitrogen on the optical and transport properties of Ga0.48In0.52NyP1−y grown on GaAs(001) substrates

Hong, Y. G.; Nishikawa, Atsushi; Tu, C. W.

doi:10.1063/1.1637148

Cited by 35 publications

(31 citation statements)

References 14 publications

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“…Mutual passivation of Si and N has been also observed in Si doped Ga 0.48 In 0.52 N x P 1-x . 62 All these results clearly demonstrate the general nature of this phenomenon.…”

Section: -supporting

confidence: 52%

Band anticrossing in dilute nitrides

Shan

Walukiewicz

et al. 2004

J. Phys.: Condens. Matter

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Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states.The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

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“…Mutual passivation of Si and N has been also observed in Si doped Ga 0.48 In 0.52 N x P 1-x . 62 All these results clearly demonstrate the general nature of this phenomenon.…”

Section: -supporting

confidence: 52%

Band anticrossing in dilute nitrides

Shan

Walukiewicz

et al. 2004

J. Phys.: Condens. Matter

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“…The large modification of the electronic band structure profoundly affects the optical and electrical properties of these alloys. Thus it has been shown that incorporation of a small amount of N leads to a large reduction of the fundamental band gap [6][7][8], an increase of the electron effective mass [9], an improved donor activation efficiency of the group VI donors [10,11] and to mutual passivation of the group IV donors and the nitrogen [12,13]. Similar effects have also been observed in GaInNAs [14,15], GaNP [16,17], InNP [18], and AlGaNAs [19].…”

Section: Introductionmentioning

confidence: 55%

A theoretical investigation of ZnO_xS_1–x alloy band structure

Rozale¹,

Beldi²,

Bouhafs³

et al. 2007

Physica Status Solidi (b)

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We report the properties of ordered ZnO x S 1-x alloys calculated in various structures (CuAu -I, Cu 3 Au, Luzonite and Famatinite) using a first-principles total-energy formalism based on the hybrid full-potential augmented plane-wave plus local orbitals (APW + lo) method, within the local-density approximation (LDA). The calculated band gaps of the alloys are direct and range from 0.49 for O-rich to 1.55 eV for S-rich ZnO x S 1-x . The non linear variation of the band gap energy is related to the large electronegativity difference between O and S.

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“…The rapid decrease in the amplitude of the PR signal at low temperatures is attributed to the carrier freezing effect and the intense photoluminescence at such low temperatures [10,11]. In addition, the effects are stronger in the samples with higher N contents due to the carrier localization caused by N-related localized states as that observed in GaAsN and GaInAsN [14,15]. The electron-hole pairs induced by a pump beam are unable to modulate the built-in electric field effectively, because they are immediately localized and cannot be separated in the structure.…”

Section: Resultsmentioning

confidence: 87%

Analysis of band anticrossing in InGaPN alloys grown on GaAs substrates

Lin

Wang

et al. 2008

Phys. Status Solidi (c)

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The band anticrossing (BAC) model is introduced to describe the influence of the incorporated nitrogen on the band structure of dilute nitrides. An isolated N introduces highly localized states in these nitrides, which interact with the extended conduction‐band states of the host semiconductor. The interaction splits the conduction band into an upper and a lower subband. There are reports of the band‐gap reduction in InGaPN, but no experimental observations of the upper subband have been reported. In this work, temperature‐dependent photoreflectance (PR) and photoluminescence (PL) spectra are employed to examine the band structure of InGaPN/GaAs heterostructures. Besides the band gap, the upper subband predicted by the BAC model is observed in the PR spectra. By eliminating the contributions of the strain and ordering effects in InGaPN, and assigning the localized state energy EN introduced by an isolated N to be 2.04 eV at 293 K, the interaction potential is determined as 1.449±0.170 eV. With N incorporation, the PL peak energy exhibits a particular behavior with temperature, which is not observed in the PR spectra. This is attributed to carrier localization at low temperatures occurring in N‐diluted semiconductors. Additionally, the temperature dependence of the band gap is described by the BAC model incorporating two different EN levels, either constant or temperature‐dependent. In our hands, the assumption of the temperature‐dependent EN level results in a better fit with the experimental data. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Effect of nitrogen on the optical and transport properties of Ga0.48In0.52NyP1−y grown on GaAs(001) substrates

Cited by 35 publications

References 14 publications

Band anticrossing in dilute nitrides

Band anticrossing in dilute nitrides

A theoretical investigation of ZnO_xS_1–x alloy band structure

Analysis of band anticrossing in InGaPN alloys grown on GaAs substrates

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Effect of nitrogen on the optical and transport properties of Ga0.48In0.52NyP1−y grown on GaAs(001) substrates

Cited by 35 publications

References 14 publications

Band anticrossing in dilute nitrides

Band anticrossing in dilute nitrides

A theoretical investigation of ZnOxS1–x alloy band structure

Analysis of band anticrossing in InGaPN alloys grown on GaAs substrates

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A theoretical investigation of ZnO_xS_1–x alloy band structure