Effect of nonlinear physical phenomena on the photovoltaic effect in silicon p+–n–n+ solar cells

Mnatsakanov, T. T.; Shuman, V. B.; Pomortseva, L. I.; Schröder, Dierk; Schlögl, A.

doi:10.1016/s0038-1101(99)00171-9

Cited by 7 publications

(7 citation statements)

References 26 publications

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“…A detailed understanding of the factors that govern the motion of mobile charge carriers through nanostructures is critical to the rational design of nanoscale devices. − Understanding carrier motion is particularly important for nanowires (NWs) encoded with p-n junctions, which have been widely explored for use in photovoltaic devices based on a range of materials including Si, − InP, GaAs, , and CdS. , Because of the inherently small dimensions, many nanoelectronic components operate at high carrier concentrations resulting from heavy doping or high injection conditions. In this regime, carrier–carrier interactions and other many body effects (e.g., dopant/carrier interactions, electron screening, and electron–hole scattering) must be considered. − Charge carrier dynamics in nanostructures are further complicated by unintentional electric fields created through surface charging , or ionized defects. Under conditions of high carrier density and short length scales, our understanding of charge carrier flow through nanostructures draws heavily on experimental observations coupled with sophisticated simulations.…”

Section: Nanowire Junctionsmentioning

confidence: 99%

Imaging Charge Separation and Carrier Recombination in Nanowire p-i-n Junctions Using Ultrafast Microscopy

et al. 2014

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Silicon nanowires incorporating p-type/n-type (p-n) junctions have been introduced as basic building blocks for future nanoscale electronic components. Controlling charge flow through these doped nanostructures is central to their function, yet our understanding of this process is inferred from measurements that average over entire structures or integrate over long times. Here, we have used femtosecond pump-probe microscopy to directly image the dynamics of photogenerated charge carriers in silicon nanowires encoded with p-n junctions along the growth axis. Initially, motion is dictated by carrier-carrier interactions, resulting in diffusive spreading of the neutral electron-hole cloud. Charge separation occurs at longer times as the carrier distribution reaches the edges of the depletion region, leading to a persistent electron population in the n-type region. Time-resolved visualization of the carrier dynamics yields clear, direct information on fundamental drift, diffusion, and recombination processes in these systems, providing a powerful tool for understanding and improving materials for nanotechnology.

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Section: Nanowire Junctionsmentioning

confidence: 99%

Imaging Charge Separation and Carrier Recombination in Nanowire p-i-n Junctions Using Ultrafast Microscopy

et al. 2014

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“…This is exemplified by the highly nonlinear density response of silicon based solar cells, where electronhole scattering can play a significant role in device operation, especially under strong illumination conditions. 2 This work is part of the research program of the "Stichting voor Fundamenteel Onderzoek der Materie ͑FOM͒," which is financially supported by the "Nederlandse Organisatie voor Wetenschappelijk Onderzoek ͑NWO͒." We are grateful to H. G. Muller for helpful discussions.…”

Section: Using 17mentioning

confidence: 99%

“…Carrier-carrier collisions, for instance, can strongly affect the conductivity, and the decrease of electron and hole drift mobilities with increasing charge carrier densities is an important factor in determining the current-voltage characteristics of, for example, semiconductor diodes at increased current densities 1 and solar cells under strong illumination conditions. 2 Charge mobility depends on two quantities: its effective mass and scattering time ͑i.e., the average time in-between momentum-randomizing events, due to, e.g., electronphonon scattering͒. Theory has indicated that both of these quantities can be strongly dependent on the free charge density in semiconductors.…”

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confidence: 99%

Reduction of carrier mobility in semiconductors caused by charge-charge interactions

et al. 2007

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We investigate the effect of charge-charge interactions on carrier mobility in titanium dioxide ͑TiO 2 ͒ and silicon ͑Si͒ using terahertz spectroscopy. Charge scattering times and plasma frequencies are directly determined as a function of charge density. In Si, a linear increase in scattering rate for densities exceeding 10 21 m −3 is attributed to electron-hole scattering. In contrast, in TiO 2 , charge-charge interactions are suppressed due to dielectric screening, highlighting the vastly different dielectric properties for these two materials. DOI: 10.1103/PhysRevB.75.233202 PACS number͑s͒: 72.40.ϩw, 72.10.Di, 72.20.Dp Charge-charge interactions determine many of the properties of highly doped or photoexcited semiconductors. Carrier-carrier collisions, for instance, can strongly affect the conductivity, and the decrease of electron and hole drift mobilities with increasing charge carrier densities is an important factor in determining the current-voltage characteristics of, for example, semiconductor diodes at increased current densities 1 and solar cells under strong illumination conditions. 2 Charge mobility depends on two quantities: its effective mass and scattering time ͑i.e., the average time in-between momentum-randomizing events, due to, e.g., electronphonon scattering͒. Theory has indicated that both of these quantities can be strongly dependent on the free charge density in semiconductors. [3][4][5] Experimental investigations of carrier-carrier interactions are, however, intrinsically more complex, as most experimental techniques ͑such as optical reflectivity measurements 6,7 ͒ cannot easily distinguish between changes in scattering time and effective mass. Terahertz time-domain spectroscopy ͑THz-TDS͒, with its ability to determine both the real and imaginary components of the complex conductivity, 8 allows us to differentiate between density-dependent changes in effective mass from changes in scattering time.Here, we compare the high-density photoconductivity of single crystal silicon ͑Si͒ and rutile-type titanium dioxide ͑TiO 2 ͒, two technologically relevant materials with low and high dielectric functions, respectively. By photoexciting with intense, femtosecond ultraviolet laser pulses and probing with THz pulses, we can generate and measure high-density plasmas in semiconductors on ultrafast time scales, accessing plasma densities spanning 5 orders of magnitude from 10 21 to 10 26 m −3 . In Si, we find that the scattering rate increases linearly for densities Ͼ10 21 m −3 , an effect characteristic of direct charge-charge scattering. For TiO 2 , the variation of the scattering rate with density is much weaker and is caused by band filling effects. The difference between these two materials is shown to originate from their vastly different dielectric screening properties.The TiO 2 ͑1 mm thick 001 rutile crystal grown commercially by the Verneuil method by Crystal-GmbH͒ and silicon ͑0.5 mm thick undoped Si wafer, grown by the Czochralski method with estimated impurity density Ͻ10 13 cm −3 ,...

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“…where j sn and j sp are the saturation currents of the p + -n and n + -n junctions, respectively. Taking into account the bandgap narrowing at a high doping level, Auger recombination and EHS in the emitters, the expression for the effective saturation current j s can be written as [7]…”

Section: The Statement Of the Problemmentioning

confidence: 99%

On the thermal stability of high-voltage rectifier diodes

Mnatsakanov

Levinshteǐn

Freĭdlin

et al. 2006

Semicond. Sci. Technol.

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An analytical theory that makes it possible to determine the parameters of inversion points in current-voltage characteristics of high-voltage p-i-n rectifier diodes is suggested. All the main nonlinear processes (electron-hole scattering (EHS), Auger recombination, gap narrowing in a highly doped emitter) are considered. The temperature dependences of all the main parameters, including the bandgap, carrier (electron and hole) mobilities and diffusion coefficients, EHS, contact resistance and nonequilibrium carrier lifetime are taken into account. The predictions of the theory are compared with the results of adequate numerical experiments for a high-voltage (10 kV class) 4H-SiC p + -i-n diode. The numerical data obtained coincide well with the predictions of the analytical theory.

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Effect of nonlinear physical phenomena on the photovoltaic effect in silicon p+–n–n+ solar cells

Cited by 7 publications

References 26 publications

Imaging Charge Separation and Carrier Recombination in Nanowire p-i-n Junctions Using Ultrafast Microscopy

Imaging Charge Separation and Carrier Recombination in Nanowire p-i-n Junctions Using Ultrafast Microscopy

Reduction of carrier mobility in semiconductors caused by charge-charge interactions

On the thermal stability of high-voltage rectifier diodes

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