Effect of nonparabolicity on the energy levels of hydrogenic donors inGaAs−Ga1−x

Effects of hydrostatic pressure on the donor binding energy and intra donor transition matrix elements in GaAs–GaAlAs quantum wells

“…We want to emphasize that for single quantum wells larger than 50 Å, the no parabolic effective mass effects are lower than 5% [23]. In the above expression w,b ( , ) P T ε are the corresponding static dielectric constants of well layer and barrier layer, where at 4 K, T = the GaAs static dielectric constant with respect to pressure is given by [18] 3 w ( , 4 K) 12.83 exp ( 1.67 10 ) .…”

Optical nutation in a magnetized semiconductor quantum well structure

“…Thus to make the analysis appropriate in the absence of the different many-body effects as discussed above, we have restricted the numerical analysis of optical nutation to a detuning ≥ 2 T Apart from the various many-body effects as discussed above, one has to recognize the roles of band nonparabolicity as well as band anisotropy on the excitonic features in a quantum well. Chaudhuri and Bajaj [23] have shown that for a GaAs quantum well of thickness L ≥ a ex and sandwiched between two semi-infinite layers of Al x Ga 1−x As with Al concentration x ≤ 0.4, the effect of band nonparabolicity on the ground-state exciton binding-energy is almost negligible. Moreover, for the above range of Al-concentration, one may treat both static dielectric constant and the electron effective mass as identical in both GaAs and Al x Ga 1−x As layers [24].…”

Hydrogenic impurities in graded GaAs–(Ga,Al)As quantum-well wires in an electric field

“…The behavior of a hydrogenic impurity center located in a quantum-well structure has been a topic of considerable interest [1][2][3][4]. The interest in such systems stems mainly from the differences between the behavior of shallow-donor impurities confined to a quantum well and the equivalent bulk system.…”