We have developed a simple theory to understand the role of interfacial quality in the line shape of photoluminescence spectra in quantum wells. The interface is described in terms of microscopic fluctuations δ1 and δ2, where δ1 is the local fluctuation in the well width and δ2 is the lateral correlated extent of the fluctuation. We make use of Lifshitz theory of disordered alloys to determine the probability of distribution of fluctuations in the well size over the extent of the optical probe, i.e., the exciton. The line shape is then calculated from this probability distribution. Both δ1 and δ2 are found to be important in controlling the linewidths in quantum wells. The use of this quantitative theory to characterize the microscopic nature of interfaces is discussed.
We have performed a numerical calculation of the energy dispersion relation of hybrid magneto-electric states (both propagating and evanescent) in an electron waveguide subjected to a magnetic field. Our results are considerably different from those obtained through the Bohr–Sommerfield quantization condition. We have also calculated the density of the magneto-electric states as a function of energy and the velocity versus energy relationships. Finally, we show how the wavefunctions of these states evolve with increasing magnetic field from particle in a box states to edge states. These results are useful in the analysis of numerous recent magnetotransport experiments performed in electron waveguides.
Temperature-dependent Hall-effect measurements on two Cr-doped GaAs samples show a dominant center at E\-0.324-1.4X 10~4T eV, with respect to the valence-band edge. By comparison with secondary-ion mass spectroscopy measurements of the Cr concentration, and recent E PR measurements of the Cr 2+ , Cr 3+ , and Cr 4+ concentration in several samples, it is shown unambiguously that this energy describes the Cr 4+ -*Cr 3+ transition. This is the first conclusive evidence for a charge-state transition involving Cr 4+ in GaAs.
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