Hydrogenic-impurity ground state inGaAs−Ga1−xAlx

S. Chaudhuri

¹

Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well

“…We would like to point out that the variational method can not give very accurate results for the impurity ground-state energy. But according to previous study for impurity state in semiconducting quantum structures, the reasonable trend of the ground-state impurity energy can be obtained by means of a variational method [26][27][28].…”

“…In order to calculate the ground-state donor binding energy of hydrogenic impurity in ZB GaN/AlGaN QW, the trail wave function may be written as [26][27][28] …”

Shallow impurity binding energy in lateral parabolic confinement under an external magnetic field

“…Bastard calculated the binding energy of the ground state of a hydrogenic impurity in a QW finding a strong dependence of the energy on the impurity position when it moves along the growth axis of the system. Chaudhury [13] determined a hydrogenic impurity binding energy when confined in a multiple Q2D system of GaAs-Ga 1−x Al x As for varying GaAs well and Ga 1−x Al x As barrier thicknesses. He found results agreeing with Bastard's in the appropriate limits.…”

Quantum Size Effects of Hydrogen Impurity at Off-Center Donor Atom in Spherical Quantum Dots

“…2 Bastard and many researchers have independently studied the energy level of the hydrogen impurity states in quantum confinement system with a finite barrier height. [2][3][4][5] Most of these calculations were based on variational theory to obtain the ground state. 6,7 Zhu et al generalize the model to the case of off-center donor impurities in quantum dots.…”