Effect of novel Nd3+ doping on physical properties of nebulizer spray pyrolysis fabricated ZnS thin films for optoelectronic technology

A Comparative Study of the Structural and Optical Properties of ZnS Films Deposited by Spray‐Pyrolysis Technique

“…In addition, a peak around 580 nm was also identified and is certainly due to the positively charged electron transition and surface traps mediated by defects in the band gap. [40] The peaks observed at 645, 649, and 697 nm can be attributed to deep level states located in the ZnS band gap. [41] The other peaks found at 702, 730, and 768 nm probably result from oxygen vacancies or other defects in ZnS which are in good agreement with previously reported works.…”

“…[44,45] It is noticed that the intensity of the different peaks is affected by increasing the Zn molar concentration, this can be related to the formation of defects or oxygen vacancies. [35] 271, [35] 263 [22] 2TO Γ 578 578 578 566, [22] 554, [36] 570 [37] 𝜌[CH 2 ] 993 993 993 972, 931, [38] 964 [39] 3LO 1102 1102 1102 1100, [40] 1045.1, [41] 1044, [42] 1047 [43]…”

“…It is also investigated as an electron transport layer (ETL) for future perovskite solar cells applications, light-emitting diodes, and gas sensor applications. [1,[9][10][11][12][13][14][15] Moreover, it shows good lattice matching with I-III-VI 2 semiconductors used as absorber layers in solar cells. [16] ZnS is also considered as a future ETL in solar cells and optoelectronic devices to increase their efficiency and stability.…”

Assessment of the anharmonic phonon decay, Fröhlich interactions, and phonon lifetime in Zn0.98Mn0.02S thin films through temperature‐dependent Raman spectroscopy

“…[ 5 ] Jebathew et al have observed E 1 (LO) mode at 348 cm −1 in ZnS thin films corresponding to wurtzite phase. [ 6 ] MnZnS nanobelts prepared by Kamran et al had LO mode at 351.1 cm −1 . [ 7 ] Amaranatha Reddy et al have observed Raman modes in ZnS nanoparticles at 264 and 347 cm −1 corresponding to E 1 (TO) and E 1 (LO) modes.…”

“…The main intention of the present work is to understand the chemical and structural uniformity of the deposited thin films using Raman mapping. There are several reports on the room temperature Raman spectra of ZnS [ 5,6,8 ] and Mn‐doped ZnS. [ 7,14,21 ] However, no reports are available on the temperature dependency of phonon modes in spray‐deposited MnZnS thin films.…”