2009
DOI: 10.1149/1.3072778
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Effect of Organosilane Underlayers on the Effectiveness of NiB Barrier Layers in ULSI Metallization

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Cited by 7 publications
(12 citation statements)
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“…In this study, electroless NiB plating was employed, and optimized for metallization of polymer microarchitectures. First, NiB films were formed on flat Au‐coated Si substrates with different immersion times in order to investigate the deposition rate and the properties of NiB.…”
Section: Resultsmentioning
confidence: 99%
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“…In this study, electroless NiB plating was employed, and optimized for metallization of polymer microarchitectures. First, NiB films were formed on flat Au‐coated Si substrates with different immersion times in order to investigate the deposition rate and the properties of NiB.…”
Section: Resultsmentioning
confidence: 99%
“…Finally, the metallization was achieved via NiB electroless plating (Figure (4)) at a constant temperature of 70 °C and pH of 9. The plating bath consisted of 0.1 mol L −1 nickel sulphate, 0.2 mol L −1 potassium citrate and 0.05 mol L −1 dimethyl amine borane . The plating time was varied from 18 s to 3 min to achieve NiB film thicknesses ranging from 10 to 100 nm on the templates.…”
Section: Methodsmentioning
confidence: 99%
“…Electroless barrier layers (EBLs), which are ultrathin (<10 nm) and amenable to conformal deposition, have been proposed as the alternative process using an organosilane monolayer (OSML), and the barrier effectiveness against Cu thermal diffusion up to 400 C was reported with 6-nm-thick NiB and 10-nm-thick CoWP/NiB barrier layers. [14][15][16] It was also reported that 3-[2-(2-aminoethylamino)ethyl-amino]propyltrimethoxysilane (TAS) is superior to aminopropyltriethoxysilane (APTES) as the OSML for depositing thin and uniform NiB layers with reduced surface roughness. 15,16) However, further evaluation under bias temperature stress (BTS) is required for device applications to guarantee the barrier integrity in its operation under bias stress.…”
Section: Introductionmentioning
confidence: 99%
“…[14][15][16] It was also reported that 3-[2-(2-aminoethylamino)ethyl-amino]propyltrimethoxysilane (TAS) is superior to aminopropyltriethoxysilane (APTES) as the OSML for depositing thin and uniform NiB layers with reduced surface roughness. 15,16) However, further evaluation under bias temperature stress (BTS) is required for device applications to guarantee the barrier integrity in its operation under bias stress.…”
Section: Introductionmentioning
confidence: 99%
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