Effect of Oxidation on Indium Solderability

Kim, Jong Man; Schoeller, Harry; Cho, Junghyun; Park, Seungbae

doi:10.1007/s11664-007-0346-7

Cited by 45 publications

(20 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Using a curve of In oxide thickness as a function of temperature in ambient atmospheric pressure as reported in studies by Kim et al 37 and Schoeller et al, 38 we can estimate the amount of In oxide on all unheated and MBE samples as ≈ 5 nm, confirming the XPS results in Table II. The thermally evaporated In heated sample is heated in ambient atmospheric pressure to 190 • C, thus growing an estimated 20 nm layer of In oxide.…”

Section: Surface Oxidessupporting

confidence: 85%

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

McRae

Béjanin

Earnest

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing materials losses is crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level states (TLSs) are the dominating loss mechanism at low photon number and temperature. Thermally evaporated indium is determined to have a TLS loss tangent due to indium oxide of ∼ 5 × 10 −5 . The molecular beam epitaxial films show evidence of formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.

show abstract

Section: Surface Oxidessupporting

confidence: 85%

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

McRae

Béjanin

Earnest

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…As a result of the reducing atmosphere in the selenization process, the indium species will be reduced to indium metal . Because of the low melting point (156.6°C) of indium, this species will be vaporized during the selenization process and produce indium loss.…”

Section: Resultsmentioning

confidence: 99%

Synthesis and Characterization of Silver Indium Diselenide Thin Films Prepared via the Sol‐Gel Assisted Process

Chien

Lin

2012

Int J Applied Ceramic Tech

View full text Add to dashboard Cite

Single-phased AgInSe 2 thin films were successfully prepared via depositing sol-gel derived precursors, followed by a selenization process. The pure-phased AgInSe 2 thin films were obtained at a selenization temperature as low as 400°C via adding the excess amount of In 3+ ions. Adjusting the In 3+ /Ag + molar ratios can effectively prevent the formation of impurities Ag 2 Se and AgIn 5 Se 8 in thin films. A Raman spectrum indicated that the obtained films belonged to chalcopyrite structure. The optical absorption revealed that the obtained AgInSe 2 had the band gap of 1.23 eV. According to the GIXD analysis of the prepared films, the formation mechanism of AgInSe 2 thin films is proposed. Se vapor reacts with Ag to produce Ag 2 Se at first, and then Se vapor subsequently reacts with In 2 O 3 and Ag 2 Se to form AgInSe 2 . The sol-gel assisted route with a selenization process was demonstrated to be a potential way for preparing AgInSe 2 thin films with densified microstructures.

show abstract

“…The natural oxide, which forms in ambient air, is very hard and renders bonding difficult. 17 However, if the oxide is broken and pure indium gets in contact with pure indium, a strong bond is formed.…”

Section: Fabrication Of Alkali Vapor Cellsmentioning

confidence: 99%

Low-temperature indium-bonded alkali vapor cell for chip-scale atomic clocks

Straessle

Pellaton

Affolderbach

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

A low-temperature sealing technique for micro-fabricated alkali vapor cells for chip-scale atomic clock applications is developed and evaluated. A thin-film indium bonding technique was used for sealing the cells at temperatures of 140 C. These sealing temperatures are much lower than those reported for other approaches, and make the technique highly interesting for future micro-fabricated cells, using anti-relaxation wall coatings. Optical and microwave spectroscopy performed on first indium-bonded cells without wall coatings are used to evaluate the cleanliness of the process as well as a potential leak rate of the cells. Both measurements confirm a stable pressure inside the cell and therefore an excellent hermeticity of the indium bonding. The double-resonance measurements performed over several months show an upper limit for the leak rate of 1.5 Â 10 À13 mbarÁl/s. This is in agreement with additional leak-rate measurements using a membrane deflection method on indium-bonded test structures.

show abstract

Effect of Oxidation on Indium Solderability

Cited by 45 publications

References 5 publications

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

Synthesis and Characterization of Silver Indium Diselenide Thin Films Prepared via the Sol‐Gel Assisted Process

Low-temperature indium-bonded alkali vapor cell for chip-scale atomic clocks

Contact Info

Product

Resources

About