Synthesis and Characterization of Silver Indium Diselenide Thin Films Prepared via the Sol‐Gel Assisted Process

Abstract

Single-phased AgInSe 2 thin films were successfully prepared via depositing sol-gel derived precursors, followed by a selenization process. The pure-phased AgInSe 2 thin films were obtained at a selenization temperature as low as 400°C via adding the excess amount of In 3+ ions. Adjusting the In 3+ /Ag + molar ratios can effectively prevent the formation of impurities Ag 2 Se and AgIn 5 Se 8 in thin films. A Raman spectrum indicated that the obtained films belonged to chalcopyrite structure. The optical absorption revealed that the obtained AgInSe 2 had the band gap of 1.23 eV. According to the GIXD analysis of the prepared films, the formation mechanism of AgInSe 2 thin films is proposed. Se vapor reacts with Ag to produce Ag 2 Se at first, and then Se vapor subsequently reacts with In 2 O 3 and Ag 2 Se to form AgInSe 2 . The sol-gel assisted route with a selenization process was demonstrated to be a potential way for preparing AgInSe 2 thin films with densified microstructures.

Amorphous Ternary Ceramics Instability Below 450°C: Nano‐Scale Arguments from the Lattice Compatibility Theory (LCT)

“…Sulfur, oxygen, and selenium ternary ceramics are attractive materials for their wide panoply of applications such as in smart windows, transparent electrodes, and solar cells. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] Ternary ceramics, such as P-type Cu-Al-O, Cu-In-O, Ag-Al-Se, and Zn-Al-S compounds, have been fabricated by several techniques under high deposition temperatures. Recently, Chen et al 1 succeeded in elaborating CuInSe 2 and CuGaSe 2 ceramics under relatively low temperatures (350°C).…”

“…Sulfur, oxygen, and selenium ternary ceramics are attractive materials for their wide panoply of applications such as in smart windows, transparent electrodes, and solar cells . Ternary ceramics, such as P‐type Cu‐Al‐O, Cu‐In‐O, Ag‐Al‐Se, and Zn‐Al‐S compounds, have been fabricated by several techniques under high deposition temperatures.…”